5STP45N2200

VDSM ITAVM ITRMS ITSM VT0 rT = = = = = = 2800 V 5080 A 7970 A 75000 A 0.86 V 0.07 mΩ Phase Control Thyristor 5STP 45N2800 Doc. No. 5SYA1007-03 Jan. 02 Patented free-floating silicon technology Low on-state and switching losses for traction, energy and industrial applications Optimum power handling capability Interdigitated amplifying gate Designed www.DataSheet4U.com Blocking Maximum rated values 1) Symbol VDRM, VRRM VRSM1 dV/dtcrit Parameter Conditions f = 50 Hz, tp = 10ms tp = 5ms, single pulse Exp. to 0.67 x VDRM, Tj = 125°C 5STP 45N2800 5STP 45N2600 5STP 45N2200 2800 V 3000 V 2600 V 2800 V 1000 V/µs min typ max 400 400 Unit mA mA 2200 V 2400 V Characteristic values Symbol Conditions IDRM IRRM VDRM, Tj = 125°C VRRM, Tj = 125°C Forwarde leakage current Reverse leakage current Mechanical data Maximum rated values 1) Parameter Mounting force Acceleration Acceleration Characteristic values Symbol Conditions FM a a Device unclamped Device clamped min 81 typ 90 max 108 50 100 Unit kN m/s m/s Unit kg mm mm 2 2 Parameter Weight Surface creepage distance Air strike distance Symbol Conditions m DS Da min 56 22 typ 2.9 max 1) Maximum Ratings are those values beyond which damage to the device may occur ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. 5STP 45N2800 On-state Maximum rated values 1) Parameter Max. average on-state current RMS on-state current Max. peak non-repetitive surge current L...