Phase Control Thyristor
VDSM ITAVM ITRMS ITSM VT0 rT
= = = = = =
2800 V 5080 A 7970 A 75000 A 0.86 V 0.07 mΩ
Phase Control Thyristor
5STP 45...
Description
VDSM ITAVM ITRMS ITSM VT0 rT
= = = = = =
2800 V 5080 A 7970 A 75000 A 0.86 V 0.07 mΩ
Phase Control Thyristor
5STP 45N2800
Doc. No. 5SYA1007-03 Jan. 02
Patented free-floating silicon technology Low on-state and switching losses for traction, energy and industrial applications Optimum power handling capability Interdigitated amplifying gate
Designed www.DataSheet4U.com
Blocking
Maximum rated values
1)
Symbol VDRM, VRRM VRSM1 dV/dtcrit Parameter
Conditions f = 50 Hz, tp = 10ms tp = 5ms, single pulse Exp. to 0.67 x VDRM, Tj = 125°C
5STP 45N2800 5STP 45N2600 5STP 45N2200 2800 V 3000 V 2600 V 2800 V 1000 V/µs min typ max 400 400 Unit mA mA 2200 V 2400 V
Characteristic values
Symbol Conditions IDRM IRRM VDRM, Tj = 125°C VRRM, Tj = 125°C
Forwarde leakage current Reverse leakage current
Mechanical data
Maximum rated values
1)
Parameter Mounting force Acceleration Acceleration
Characteristic values
Symbol Conditions FM a a Device unclamped Device clamped
min 81
typ 90
max 108 50 100
Unit kN m/s m/s Unit kg mm mm
2 2
Parameter Weight Surface creepage distance Air strike distance
Symbol Conditions m DS Da
min 56 22
typ 2.9
max
1)
Maximum Ratings are those values beyond which damage to the device may occur
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
5STP 45N2800
On-state
Maximum rated values
1)
Parameter Max. average on-state current RMS on-state current Max. peak non-repetitive surge current L...
Similar Datasheet