Phase Control Thyristor
VDRM VDSM IT(AV)M IT(RMS) ITSM V(T0) rT
= = = = = = =
5600 6500 3460 5440 71.4×103 1.24 0.162
V V A A A V mΩ
Phase C...
Description
VDRM VDSM IT(AV)M IT(RMS) ITSM V(T0) rT
= = = = = = =
5600 6500 3460 5440 71.4×103 1.24 0.162
V V A A A V mΩ
Phase Control Thyristor
5STP 42U6500
Doc. No. 5SYA1043-02 Oct. 04
Patented free-floating silicon technology Low on-state and switching losses Designed for traction, energy and industrial applications Optimum power handling capability Interdigitated amplifying gate
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Blocking
Maximum rated values
1)
Symbol VDSM, VRSM VDRM, VRRM VRSM dV/dtcrit Parameter
Conditions f = 5 Hz, tp = 10 ms f = 50 Hz, tp = 10 ms tp = 5 ms, single pulse Exp. to 3750 V, Tvj = 110°C Symbol Conditions IDSM IRSM
5STP 42U6500 5STP 42U6200 6500 V 5600 V 7000 V 6200 V 5300 V 6700 V 2000 V/µs min typ
5STP 42U5800 5800 V 4900 V 6300 V
Characteristic values
max 700 700
Unit mA mA
Forward leakage current Reverse leakage current
VDSM, Tvj = 110°C VRSM, Tvj = 110°C
Mechanical data
Maximum rated values
1)
Parameter Mounting force Acceleration Acceleration
Characteristic values
Symbol Conditions FM a a Device unclamped Device clamped
min 120
typ 135
max 160 50 100
Unit kN m/s m/s Unit kg mm mm mm
2 2
Parameter Weight Housing thickness Surface creepage distance
Symbol Conditions m H DS FM = 135 kN, Ta = 25 °C
min 34.8 56
typ
max 3.6 35.5
Air strike distance Da 22 1) Maximum rated values indicate limits beyond which damage to the device may occur
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
5STP 42U6...
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