HIGH TEMPERATURE GaAlAs IR EMITTERS
FEATURES
ANODE (CASE)
OD-880LHT
1.00 MIN. GLASS DOME .015
• Extended operating temperature range
.209 .220
• No internal coatings
• No derating or heat sink required to 80°C All surfaces are gold plated. Dimensions are nominal values in inches unless otherwise specified. Window caps are welded to the case.
.183 .152 .186 .156 .017 .024 .043 .143 .150
.100 .041
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CATHODE
.036 45°
RoHS
ELECTRO-OPTICAL CHARACTERISTICS AT 25°C
PARAMETERS Total Power Output, Po TEST CONDITIONS IF = 100mA IF = 50mA IF = 100mA IR = 10MA VR = 0V MIN 6 TYP 8.5 880 80 35 30 17 MAX UNITS mW nm nm
Spectral Bandwidth at 50%, $L Half Intensity Beam Angle, Q Forward Voltage, VF
Peak Emission Wavelength, LP
Capacitance, C Rise Time Fall Time
Reverse Breakdown Voltage, VR
5
1.55
1.9
Volts Volts Msec Msec pF
Deg
0.5 0.5
ABSOLUTE MAXIMUM RATINGS AT 25°C CASE
Continuous Forward Current Reverse Voltage Power Dissipation1 190mW 100mA 5V 3A
Peak Forward Current (10Ms, 400Hz)2
Lead Soldering Temperature (1/16" from case for 10sec)
1Derate per Thermal Derating Curve above 25°C 2Derate linearly above 25°C
260°C
THERMAL PARAMETERS
Storage and Operating Temperature Range Maximum Junction Temperature Thermal Resistance, RTHJA1
-65°C TO 150°C 370°C/W Typical 120°C/W Typical 150°C
1Heat transfer minimized by measuring in still air with minimum heat conducting through leads 2Air circulating at a rapid rate to keep case temperature at 25°C
Thermal Resistance, RTHJA2
750 Mitchell Road, Newbury Park, California 91320 Phone: (805) 499-0335, Fax: (805) 499-8108 Email:
[email protected], Website: www.optodiode.com
HIGH TEMPERATURE GaAlAs IR EMITTERS
200 180 POWER DISSIPATION (mW) 160 140 120 100 80 60 40 20 0 25 50 75 100 AMBIENT TEMPERATURE (°C) 125 150 NO HEAT SINK INFINITE HEAT SINK
OD-880LHT
THERMAL DERATING CURVE
PEAK FORWARD CURRENT, Ip (amps)
10
MAXIMUM PEAK PULSE CURRENT
t = 10Ms t = 100Ms t = 500Ms
1
MAXIMUM RATINGS
0.1
t Ip T
0.1
D=
t T
0.01 0.01
1 DUTY CYCLE, D (%)
10
100
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TYPICAL CHARACTERISTICS
100
DEGRADATION CURVE
IF = 20mA RELATIVE POWER OUTPUT (%)
100
RADIATION PATTERN
RELATIVE POWER OUTPUT (%)
90 IF = 50mA
80
80
60
70 TCASE = 25°C NO PRE BURN-IN PERFORMED
40
60
IF = 100mA 104 105
20
50
101
102
103 STRESS TIME, (hrs)
0 –50
–40
–30
–20
–10 0 10 20 BEAM ANGLE, Q(deg)
30
40
50
4
FORWARD I-V CHARACTERISTICS
1.5 1.4
POWER OUTPUT vs TEMPERATURE
FORWARD CURRENT, IF (amps)
RELATIVE POWER OUTPUT 0 1 2 3 4 FORWARD VOLTAGE, VF (volts) 5 6
3
1.3 1.2 1.1 1.0 0.9 0.8 0.7 0.6 0.5 –50
2
1
0
–25
0 25 50 AMBIENT TEMPERATURE (°C)
75
100
100
SPECTRAL OUTPUT
1,000
POWER OUTPUT vs FORWARD CURRENT
RELATIVE POWER OUTPUT (%)
60
40
POWER OUTPUT, P o (mW)
80
100
10
20
DC PULSE 10Ms, 100Hz
0 750
800
850 900 WAVELENGTH, L(nm)
950
1,000
1 10
100 1,000 FORWARD CURRENT, IF (mA)
10,000
750 Mitchell Road, Newbury Park, California 91320 Phone: (805) 499-0335, Fax: (805) 499-8108 Email:
[email protected], Website: www.optodiode.com
.