OD-880E

HIGH-POWER GaAlAs IR EMITTERS FEATURES EPOXY DOME .145 MAX .080 .017 .178 .195 ANODE (CASE) OD-880E High reliability liquid-phase epitaxially grown GaAlAs .209 .220 880nm peak emission High uniform output TO-46 Header .100 .041 All dimensions are nominal in inches unless otherwise specified. www.DataSheet4U.com 1.00 MIN .022 CATHODE .036 45° RoHS ELECTRO-OPTICAL CHARACTERISTICS AT 25°C PARAMETERS Total Power Output, Po TEST CONDITIONS IF = 100mA IF = 50mA IF = 100mA IR = 10MA VR = 0V MIN 20 TYP 30 880 80 90 30 17 MAX UNITS mW nm nm Spectral Bandwidth at 50%, $L Half Intensity Beam Angle, Q Forward Voltage, VF Peak Emission Wavelength, LP Capacitance, C Rise Time Fall Time Reverse Breakdown Voltage, VR 5 1.55 1.9 Volts Volts Msec Msec pF Deg 0.5 0.5 ABSOLUTE MAXIMUM RATINGS AT 25°C CASE Continuous Forward Current Reverse Voltage Power Dissipation1 190mW 100mA 5V 3A Peak Forward Current (10Ms, 400Hz)2 Lead Soldering Temperature (1/16" from case for 10sec) 1Derate per Thermal Derating Curve above 25°C 2Derate linearly above 25°C 260°C THERMAL PARAMETERS Storage and Operating Temperature Range Maximum Junction Temperature Thermal Resistance, RTHJA1 -55°C TO 100°C 400°C/W Typical 135°C/W Typical 100°C 1Heat transfer minimized by measuring in still air with minimum heat conducting through leads 2Air circulating at a rapid rate to keep case temperature at 25°C Thermal Resistance, RTHJA2 750 Mitchell Road, Newbury Park, California 91320 Phone: (...