2SK3001
GaAs HEMT Low Noise Amplifier
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ADE-208-597(Z) 1st. Edition December 1997 Features
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2SK3001
GaAs HEMT Low Noise Amplifier
www.DataSheet4U.com
ADE-208-597(Z) 1st. Edition December 1997 Features
Excellent low noise characteristics. Fmin = 0.8 dB typ. (3 V, 5 mA, 0.9 GHz) High associated gain. Ga = 18 dB typ. (3 V, 5 mA, 0.9 GHz) Small package. (CMPAK-4)
Outline
This document may, wholly or partially, be subject to change without notice.
This Device is sensitive to Electro Static Discharge. It is recommended to adopt appropriate cautions when handling this
transistor. CAUTION This product use GaAs. Since dust or fume of GaAs is highly poisonous to human body, please do not treat them mechanically in the manner which might expose to the Air. And it should never be thrown out with general industrial or domestic wastes.
2SK3001
Absolute Maximum Ratings (Ta = 25°C)
Item Drain to source voltage Gate to source voltage Gate to drain voltage Drain current Channel dissipation
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Symbol VDSS VGSO VGDO ID Pch Tch Tstg
Ratings 6 –4 –4 20 100 125 –55 to +125
Unit V V V mA mW °C °C
Channel temperature Storage temperature
Electrical Characteristics (Ta = 25°C)
Item Gate to source leak current Symbol I GSS Min — –0.5 35 Typ — — 50 Max –20 –1.5 70 Unit µA V mA Test Conditions VGS = –4 V, VDS = 0 VDS = 3V, ID = 100 µA VDS = 3 V, VGS = 0 Pulse test Forward transfer admittance |yfs| PG 40 60 — mS VDS = 3 V, ID =10 mA f = 1 kHz Power Gain 15.0 18.0 — dB VDS = 3 V, ID = 5 mA f = 0.9 GHz Noise Figure NF — 0.8 1.2 dB
Gate to source cutoff voltage VGS...