Silicon N-Channel Power MOSFET
HAT2165N
Silicon N Channel Power MOS FET Power Switching
Features
• High speed switching • Capable of 4.5 V gate drive ...
Description
HAT2165N
Silicon N Channel Power MOS FET Power Switching
Features
High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance
RDS(on) = 2.8 mΩ typ. (at VGS = 10 V)
Outline
RENESAS Package code: PTSP0008DC-A (Package name: LFPAK-i)
1(S)
2XXX
2(S)
3(S)
8(D)
4(G)
7(D)
4
6(D)
G
5(D)
5678 DDDD
SSS 12 3
REJ03G1680-0300 Rev.3.00
May 27, 2008
1, 2, 3 Source
4
Gate
5, 6, 7, 8 Drain
Absolute Maximum Ratings
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel to case thermal resistance Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1%
2. Value at Tch = 25°C, Rg ≥ 50 Ω
3. Tc = 25°C
Symbol
VDSS VGSS
ID ID(pulse)Note1
IDR IAP Note 2 EAR Note 2 Pch Note3 θch-C
Tch
Tstg
Ratings 30 ±20 55 220 55 30 90 30 4.17 150
–55 to +150
(Ta = 25°C)
Unit V V A A A A mJ W
°C/W °C °C
REJ03G1680-0300 Rev.3.00 May 27, 2008 Page 1 of 6
HAT2165N
Electrical Characteristics
Item
Symbol Min
Drain to source breakdown voltage V(BR)DSS
30
Gate to source breakdown voltage V(BR)GSS ±20
Gate to source leak current
IGSS
—
Zero gate voltage drain current
IDSS
—
Gate to source cutoff voltage
VGS(off)
1.0
Static drain to source on state
RDS(on)
—
resistance
RDS(on)
—
Forward transfer admittance
|yfs|
60
Input capacitance
Ciss
—
Output capacitance
Coss
—
...
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