HAT2129H

HAT2129H Silicon N Channel Power MOS FET Power Switching Features Capable of 7 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 6 mΩ typ. (at VGS = 10 V) Outline RENESAS Package code: PTZZ0005DA-A) (Package name: LFPAK ) 5 1 234 5 D 4 G SSS 123 REJ03G0049-0500 Rev.5.00 Sep 20, 2005 1, 2, 3 Source 4 Gate 5 Drain Absolute Maximum Ratings Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Tc = 25°C 3. Value at Tch = 25°C, Rg ≥ 50 Ω Symbol VDSS VGSS ID ID(pulse)Note1 IDR IAP Note 3 EAR Note 3 Pch Note2 Tch Tstg Ratings 40 ±20 30 120 30 20 32 20 150 –55 to +150 (Ta = 25°C) Unit V V A A A A mJ W °C °C Rev.5.00 Sep 20, 2005 page 1 of 7 HAT2129H Electrical Characteristics Item Symbol Min Drain to source breakdown voltage V(BR)DSS 40 Gate to source breakdown voltage V(BR)GSS ±20 Gate to source leak current IGSS — Zero gate voltage drain current IDSS — Gate to source cutoff voltage VGS(off) 2.0 Static drain to source on state resistance RDS(on) — RDS(on) — Forward transfer admittance |yfs| 24 Input capacitance Ciss — Output capacitance Coss — Reverse transfer capacitance Crss — Total gate charge Qg — Gate to source charge Qgs — Gate to drain charge Qgd — Turn-on delay time td(on) — ...