STS6PF30L

P-CHANNEL 30V - 0.027 Ω - 6A SO-8 STripFET™ POWER MOSFET TYPE STS6PF30L www.DataSheet4U.com s TYPICAL s STS6PF30L VDSS 30 V RDS(on) <0.030 Ω ID 6A s RDS(on) = 0.027 Ω STANDARD OUTLINE FOR EASY AUTOMATED SURFACE MOUNT ASSEMBLY LOW THRESHOLD DRIVE DESCRIPTION This Power MOSFET is the latest development of STMicroelectronis unique "Single Feature Size™" strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. APPLICATIONS s MOBILE PHONE APPLICATIONS s DC-DC CONVERTERS s BATTERY MANAGEMENT IN NOMADIC EQUIPMENT SO-8 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol VDS VDGR VGS ID ID IDM() Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuous) at TC = 25°C Drain Current (continuous) at TC = 100°C Drain Current (pulsed) Information furnished is believed to be accurate and reliable. However, STMicroel of use of such information nor for any infringement of patents or other rights of third by implication or otherwise of STMicroelectronic Value under any patent or patent rights Unit to change without notice. This publication supersedes and replaces all information 30 components in life support devices V authorized for use as critical or systems withou 30 ± 16 6 3.8 24 V The ST logo is registered trademark of ST V ® 2003 STMicroelec...