DUAL N-CHANNEL 30V - 0.026Ω - 6A SO-8 2.5V-DRIVE STripFET™ II POWER MOSFET
TYPE STS6DNF30V
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s s s s
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DUAL N-CHANNEL 30V - 0.026Ω - 6A SO-8 2.5V-DRIVE STripFET™ II POWER MOSFET
TYPE STS6DNF30V
www.DataSheet4U.com
s s s s
STS6DNF30V
VDSS 30 V
RDS(on) <0.030Ω (@4.5V) <0.038Ω (@2.5V)
ID 6A
TYPICAL RDS(on) = 0.026Ω (@4.5V) TYPICAL RDS(on) = 0.030Ω (@2.5V) ULTRA LOW THRESHOLD GATE DRIVE (2.5V) STANDARD OUTLINE FOR EASY AUTOMATED SURFACE MOUNT ASSEMBLY SO-8
DESCRIPTION This Power MOSFET is the latest development of STMicroelectronics unique “Single Feature Size ™” strip-based process. The resulting
transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS s BATTERY SAFETY UNIT IN NOMADIC EQUIPMENT s DC-DC CONVERTERS s POWER MANAGEMENT IN PORTABLE/ DESKTOP PCS
ABSOLUTE MAXIMUM RATINGS
Symbol VDS VDGR VGS ID Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuos) at TC = 25°C Single Operation Drain Current (continuos) at TC = 100°C Single Operation Drain Current (pulsed) Total Dissipation at TC = 25°C Dual Operation Total Dissipation at TC = 25°C Single Operation Value 30 30 ±12 6 3.8 24 2 1.6 Unit V V V A A A W W
IDM (l) PTOT
(q) Pulse width limited by safe operating area
July 2002
1/8
STS6DNF30V
THERMAL DATA
Rthj-amb Tj Tstg Thermal Resistance Junction-ambient Max Single Operation Thermal Resistance Junction-ambient Max Dual Operatio...