Silicon Controlled Rectifier
MCR218-6FP , MCR218-10FP
Preferred Device
Silicon Controlled Rectifiers
Reverse Blocking Thyristors
Designed primarily...
Description
MCR218-6FP , MCR218-10FP
Preferred Device
Silicon Controlled Rectifiers
Reverse Blocking Thyristors
Designed primarily for half-wave ac control applications, such as motor controls, heating controls and power supply crowbar circuits. Glass Passivated Junctions with Center Gate Fire for Greater Parameter Uniformity and Stability Small, Rugged, Thermowatt Constructed for Low Thermal Resistance, High Heat Dissipation and Durability Blocking Voltage to 800 Volts www.DataSheet4U.com 80 A Surge Current Capability Insulated Package Simplifies Mounting Indicates UL Registered — File #E69369 Device Marking: Logo, Device Type, e.g., MCR218–6, Date Code
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating Peak Repetitive Off–State Voltage(1) (TJ = –40 to +125°C, Sine Wave 50 to 60 Hz, Gate Open) MCR218–6FP MCR218–10FP On-State RMS Current (TC = +70°C)(2) (180° Conduction Angles) Peak Nonrepetitive Surge Current (1/2 Cycle, Sine Wave 60 Hz, TJ = 125°C) Circuit Fusing (t = 8.3 ms) Forward Peak Gate Power (TC = +70°C, Pulse Width Symbol VDRM, VRRM 400 800 IT(RMS) ITSM 8.0 100 Amps Amps Value Unit Volts
http://onsemi.com
ISOLATED SCRs ( 8 AMPERES RMS 400 thru 800 VOLTS
)
G A K
1 2 3
I2t
26 5.0 0.5 2.0 1500 –40 to +125 –40 to +150
A2s Watts Watt 1 Amps Volts °C °C
v 1.0 µs)
PGM PG(AV) IGM V(ISO) TJ Tstg
ISOLATED TO–220 Full Pack CASE 221C STYLE 2
Forward Average Gate Power (TC = +70°C, t = 8.3 ms) Forward Peak Gate Current (TC = +70°C, Pulse Width
PIN ASSIGN...
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