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MCR218-6FP Dataheets PDF



Part Number MCR218-6FP
Manufacturers ON Semiconductor
Logo ON Semiconductor
Description Silicon Controlled Rectifier
Datasheet MCR218-6FP DatasheetMCR218-6FP Datasheet (PDF)

MCR218-6FP , MCR218-10FP Preferred Device Silicon Controlled Rectifiers Reverse Blocking Thyristors Designed primarily for half-wave ac control applications, such as motor controls, heating controls and power supply crowbar circuits. • Glass Passivated Junctions with Center Gate Fire for Greater Parameter Uniformity and Stability • Small, Rugged, Thermowatt Constructed for Low Thermal Resistance, High Heat Dissipation and Durability • Blocking Voltage to 800 Volts www.DataSheet4U.com • 80 A Su.

  MCR218-6FP   MCR218-6FP



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MCR218-6FP , MCR218-10FP Preferred Device Silicon Controlled Rectifiers Reverse Blocking Thyristors Designed primarily for half-wave ac control applications, such as motor controls, heating controls and power supply crowbar circuits. • Glass Passivated Junctions with Center Gate Fire for Greater Parameter Uniformity and Stability • Small, Rugged, Thermowatt Constructed for Low Thermal Resistance, High Heat Dissipation and Durability • Blocking Voltage to 800 Volts www.DataSheet4U.com • 80 A Surge Current Capability • Insulated Package Simplifies Mounting • Indicates UL Registered — File #E69369 • Device Marking: Logo, Device Type, e.g., MCR218–6, Date Code MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Peak Repetitive Off–State Voltage(1) (TJ = –40 to +125°C, Sine Wave 50 to 60 Hz, Gate Open) MCR218–6FP MCR218–10FP On-State RMS Current (TC = +70°C)(2) (180° Conduction Angles) Peak Nonrepetitive Surge Current (1/2 Cycle, Sine Wave 60 Hz, TJ = 125°C) Circuit Fusing (t = 8.3 ms) Forward Peak Gate Power (TC = +70°C, Pulse Width Symbol VDRM, VRRM 400 800 IT(RMS) ITSM 8.0 100 Amps Amps Value Unit Volts http://onsemi.com ISOLATED SCRs ( 8 AMPERES RMS 400 thru 800 VOLTS ) G A K 1 2 3 I2t 26 5.0 0.5 2.0 1500 –40 to +125 –40 to +150 A2s Watts Watt 1 Amps Volts °C °C v 1.0 µs) PGM PG(AV) IGM V(ISO) TJ Tstg ISOLATED TO–220 Full Pack CASE 221C STYLE 2 Forward Average Gate Power (TC = +70°C, t = 8.3 ms) Forward Peak Gate Current (TC = +70°C, Pulse Width PIN ASSIGNMENT Cathode Anode Gate 2 3 v 1.0 µs) RMS Isolation Voltage (TA = 25°C, Relative Humidity 20%) ( ) p Operating Junction Temperature Storage Temperature Range ORDERING INFORMATION Device MCR218–6FP MCR218–10FP Package ISOLATED TO220FP ISOLATED TO220FP Shipping 500/Box 500/Box (1) VDRM and VRRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; however, positive gate voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded. (2) The case temperature reference point for all TC measurements is a point on the center lead of the package as close as possible to the plastic body. Preferred devices are recommended choices for future use and best overall value. © Semiconductor Components Industries, LLC, 1999 1 February, 2000 – Rev. 2 Publication Order Number: MCR218FP/D MCR218–6FP, MCR218–10FP THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case Thermal Resistance, Case to Sink Thermal Resistance, Junction to Ambient Maximum Lead Temperature for Soldering Purposes 1/8″ from Case for 10 Seconds Symbol RθJC RθCS RθJA TL Max 2 2.2 (typ) 60 260 Unit °C/W °C/W °C/W °C ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Peak Repetitive Forward or Reverse Blocking Current (VD = Rated VDRM, Gat.


MR-E-200AG MCR218-6FP MCR218-10FP


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