SPN02N60C3

Rev. 2.1 SPN02N60C3 VDS @ Tjmax RDS(on) ID 650 3 0.4 SOT223 4 Cool MOS™ Power Transistor Feature New revolutionary high voltage technology Ultra low gate charge Extreme dv/dt rated www.DataSheet4U.com Ultra V Ω A low effective capacitances 3 2 1 VPS05163 Type SPN02N60C3 Package SOT223 Ordering Code Q67040-S4553 Marking 02N60C3 Maximum Ratings Parameter Symbol ID Value Unit Continuous drain current TA = 25 °C TA = 70 °C A 0.4 0.3 Pulsed drain current, tp limited by Tjmax TA = 25 °C Gate source voltage static I D puls VGS VGS Ptot T j , T stg 2.2 ±20 ±30 V W °C Gate source voltage AC (f >1Hz) Power dissipation, T A = 25°C 1.8 -55... +150 Operating and storage temperature Page 1 2004-03-01 Rev. 2.1 SPN02N60C3 Maximum Ratings Parameter Drain Source voltage slope V DS = 480 V, ID = 1.8 A, Tj = 125 °C Symbol dv/dt Value 50 Unit V/ns Thermal Characteristics www.DataSheet4U.com Parameter Thermal resistance, junction - soldering point SMD version, device on PCB: @ min. footprint @ 6 cm2 cooling area 1) Symbol min. RthJS RthJA - Values typ. 30 110 max. 70 Unit K/W Soldering temperature, 1.6 mm (0.063 in.) from case for 10s Tsold - - 260 °C Electrical Characteristics, at Tj=25°C unless otherwise specified Parameter Symbol Conditions min. Drain-source breakdown voltage V(BR)DSS VGS=0V, ID=0.25mA Drain-Source avalanche breakdown voltage Gate threshold voltage Zero gate voltage drain current VGS(th) IDSS ID=80µΑ, VGS=VDS VDS=600V, VGS=0V, Tj=2...