SPN02N60S5 Cool MOS™ Power Transistor
Feature • New revolutionary high voltage technology • Ultra low gate charge • Extr...
SPN02N60S5 Cool MOS™ Power
Transistor
Feature New revolutionary high voltage technology Ultra low gate charge Extreme dv/dt rated
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VDS RDS(on) ID
600 3 0.4
SOT-223
4
V Ω A
low effective capacitances
Improved transconductance
2 1
3
VPS05163
Type SPN02N60S5
Package SOT-223
Ordering Code Q67040-S4207
Marking 02N60S5
Maximum Ratings Parameter Continuous drain current TA = 25 °C TA = 70 °C Pulsed drain current, tp limited by Tjmax TA = 25 °C Gate source voltage Gate source voltage AC (f >1Hz)
Power dissipation, T A = 25°C
Symbol ID
Value 0.4 0.3
Unit A
ID puls VGS VGS Ptot Tj , Tstg
2.2 ±20 ±30 1.8 -55... +150 W °C V
Operating and storage temperature
Rev. 2.1
Page 1
2004-03-30
SPN02N60S5
Maximum Ratings Parameter Drain Source voltage slope
V DS = 480 V, ID = 1.8 A, Tj = 125 °C
Symbol dv/dt
Value 20
Unit V/ns
Thermal Characteristics
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Parameter
Symbol min. RthJS RthJA
Values typ. max.
Unit
Thermal resistance, junction - soldering point SMD version, device on PCB: @ min. footprint @ 6 cm2 cooling area 1)
-
30 110 -
-70
K/W
Soldering temperature, 1.6 mm (0.063 in.) from case for 10s
Tsold
-
-
260
°C
Electrical Characteristics, at Tj=25°C unless otherwise specified Parameter Symbol Conditions min. Drain-source breakdown voltage V(BR)DSS VGS=0V, ID=0.25mA Drain-Source avalanche breakdown voltage Gate threshold voltage Zero gate voltage drain current VGS(th) IDSS
ID=80µΑ, VGS=VDS VDS=600V, VGS...