Document
Bulletin I27116 rev. C 03/02
SERIES IRK.166, .196, .236
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STANDARD RECOVERY DIODES
NEW INT-A-pak Power Modules
Features
High Voltage Electrically Isolated by DBC Ceramic ( Al 2 O 3) 3500 V RMS Isolating Voltage Industrial Standard Package High Surge Capability Glass Passivated Chips Modules uses High Voltage Power diodes in four Basic Configurations Simple Mounting UL E78996 approved
165 A 195 A 230 A
Applications
DC Motor Control and Drives Battery Charges Welders Power Converters
Major Ratings and Characteristics
Parameters
IF(AV) @ TC IF(RMS) IFSM @ 50Hz @ 60Hz I 2t @ 50Hz @ 60Hz I 2√ t VRRM TJ range
CASE STYLE NEW INT-A-PAK
IRK.166.. IRK.196.. IRK.236.. Units
165 100 260 4000 4200 80 73 798 195 100 305 4750 4980 113 103 1130 400 to 1600 - 40 to 150 230 100 360 5500 5765 151 138 1516 A °C A A A KA2s KA2s KA2√s V °C
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1
IRK.166, .196, .236 Series
Bulletin I27116 rev. C 03/02
Electrical Specifications
Voltage Ratings
Type number Voltage Code
04 08 12 14 16
VRRM , Maximum repetitive VRSM , Maximum non-repetitive peak reverse voltage peak reverse voltage V V
400 800 1200 1400 1600 500 900 1300 1500 1700
IRRM 150°C mA
20
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IRK.166 IRK.196 IRK.236
Forward Conduction Parameter
IF(AV) Max. average on-state current @ Case temperature IF(RMS) Max. RMS on-state current IFSM Maximum peak, one-cycle on-state, non-repetitive surge current
IRK.166 IRK.196 IRK.236 Units Conditions
165 100 260 4000 4200 3350 3500 195 100 305 4750 4980 4000 4200 113 103 80 73 1130 0.69 0.78 1.3 1.2 1.38 230 100 360 5500 5765 4630 4850 151 138 107 98 1516 0.7 0.83 1.2 1.07 1.46 V mΩ KA2s A °C A A t = 10ms No voltage t = 8.3ms reapplied t = 10ms 100% VRRM Sine half wave, Initial TJ = TJ max. 180° conduction, half sine wave
t = 8.3ms reapplied t = 10ms No voltage t = 8.3ms reapplied t = 10ms 100% VRRM t = 8.3ms reapplied
I 2t
Maximum I2t for fusing
80 73 56 52
I 2 √t
Maximum I2√t for fusing voltage
798 0.73 0.88 1.5 1.26 1.43
KA2√s t = 0.1 to 10ms, no voltage reapplied V (16.7% x π x IF(AV) < I < π x IF(AV)), @ TJ max. (I > π x IF(AV)), @ TJ max. (16.7% x π x IF(AV) < I < π x IF(AV)), @ TJ max. (I > π x IF(AV)), @ TJ max. IFM = π x IF(AV), TJ = 25°C, 180°conduction Av. power = VF(TO) x IF(AV) + rf x (IF(RMS))2
VF(TO)1 Low level value of threshold VF(TO)2 High level value of threshold voltage rt1 rt2 VFM Low level value on-state slope resistance High level value on-state slope resistance Maximum forward voltage drop
Blocking
IRRM VINS Maximum peak reverse and off-state leakage current RMS isolation voltage 20 3500 mA V TJ = 150oC 50Hz, circuit to base, all terminals shorted, t = 1s
2
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IRK.166, .196, .236 Series
Bulletin I27116 rev. C 03/02
Thermal and Mechanical Specifications
Parameter IRK.166 IRK.196
-40 to 150 -40 to 150 0.2 0.16 0.05 4 to 6 4 to 6 200 (7.1) New Int-A-Pak 0.14
IRK.236
Units Conditions
°C °C K/W K/W Nm DC operation, per junction Mounting surface smooth, flat and greased Pe.