2SK1297

2SK1297 Silicon N-Channel MOS FET www.DataSheet4U.com November 1996 Application High speed power switching Features x x x x x Low on-resistance High speed switching Low drive current 4 V gate drive device  Can be driven from 5 V source Suitable for motor drive, DC-DC converter, power switch and solenoid drive Outline TO-3P D G 1 2 3 1. Gate 2. Drain (Flange) 3. Source S 2SK1297 Absolute Maximum Ratings (Ta = 25GC) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current www.DataSheet4U.com Channel dissipation Symbol VDSS VGSS ID ID(pulse)* IDR Pch* Tch Tstg 2 1 Ratings 60 Unit V V A A A W r20 40 160 40 100 150 –55 to +150 Channel temperature Storage temperature Notes 1. PW d 10 Ps, duty cycle d 1% 2. Value at TC = 25qC qC qC 2 2SK1297 Electrical Characteristics (Ta = 25GC) Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current www.DataSheet4U.com Symbol Min V(BR)DSS V(BR)GSS IGSS VGS(off) RDS(on) 60 Typ — — — — — 0.015 0.02 35 3600 1850 450 30 170 700 350 1.2 155 Max — — Unit V V Test conditions ID = 10 mA, VGS = 0 IG = r100 PA, VDS = 0 VGS = r16 V, VDS = 0 VDS = 50 V, VGS = 0 ID = 1 mA, VDS = 10 V ID = 20 A, VGS = 10 V * ID = 20 A, VGS = 4 V * VDS = 10 V, VGS = 0, f = 1 MHz 1 1 r20 — — 1.0 — — r10 250 2.0 0.018 0.025 — — — — — — — — — — Zero gate voltage drain current IDSS Gate to source cutoff voltage Static drain to source on s...