Philips Semiconductors
Product specification
N-channel TrenchMOS™ transistor
PHP18NQ20T, PHB18NQ20T
FEATURES
• ’Tren...
Philips Semiconductors
Product specification
N-channel TrenchMOS™
transistor
PHP18NQ20T, PHB18NQ20T
FEATURES
’Trench’ technology Low on-state resistance Fast switching Low thermal resistance www.DataSheet4U.com
SYMBOL
d
QUICK REFERENCE DATA VDSS = 200 V ID = 16 A
g
RDS(ON) ≤ 180 mΩ
s
GENERAL DESCRIPTION
N-channel, enhancement mode field-effect power
transistor using Trench technology, intended for use in off-line switched mode power supplies, T.V. and computer monitor power supplies, d.c. to d.c. converters, motor control circuits and general purpose switching applications. The PHP18NQ20T is supplied in the SOT78 (TO220AB) conventional leaded package. The PHB18NQ20T is supplied in the SOT404 (D2PAK) surface mounting package.
PINNING
PIN 1 2 3 tab gate drain1 source drain DESCRIPTION
SOT78 (TO220AB)
tab
SOT404 (D2PAK)
tab
2
1 23
1
3
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL PARAMETER VDSS VDGR VGS ID IDM PD Tj, Tstg Drain-source voltage Drain-gate voltage Gate-source voltage Continuous drain current Pulsed drain current Total power dissipation Operating junction and storage temperature CONDITIONS Tj = 25 ˚C to 175˚C Tj = 25 ˚C to 175˚C; RGS = 20 kΩ Tmb = 25 ˚C; VGS = 10 V Tmb = 100 ˚C; VGS = 10 V Tmb = 25 ˚C Tmb = 25 ˚C MIN. - 55 MAX. 200 200 ± 20 16 11 64 136 175 UNIT V V V A A A W ˚C
1 It is not possible to make connection to pin:2 of the SOT404 package August 1999 1 Rev 1.000
Philips Semiconducto...