PHP18NQ11T

PHP18NQ11T TrenchMOS™ standard level FET Rev. 01 — 13 November 2003 M3D307 Product data 1. Product profile 1.1 Description www.DataSheet4U.com N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS™ technology. 1.2 Features s Fast switching s Low thermal resistance. 1.3 Applications s DC-to-DC converters s Inverters s Switched-mode power supplies s Class-D audio amplifiers. 1.4 Quick reference data s VDS ≤ 110 V s Ptot ≤ 79 W s ID ≤ 18 A s RDSon ≤ 90 mΩ 2. Pinning information Table 1: Pin 1 2 3 mb Pinning - SOT78 (TO-220AB), simplified outline and symbol Description gate (g) mb d Simplified outline Symbol drain (d) source (s) mounting base; connected to drain (d) g s MBB076 MBK106 1 2 3 SOT78 (TO-220AB) Philips Semiconductors PHP18NQ11T TrenchMOS™ standard level FET 3. Ordering information Table 2: Ordering information Package Name PHP18NQ11T TO220AB Description Plastic single-ended package; heatsink mounted; 1 mounting hole; 3 lead TO220AB. Version SOT78 Type number 4. Limiting values w w w . D a t a S h e e t 4 U . c o m Table 3: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter VDS VDGR VGS ID IDM Ptot Tstg Tj IS ISM drain-source voltage (DC) drain-gate voltage (DC) gate-source voltage drain current (DC) peak drain current total power dissipation storage temperature junction temperature source (diode forward) current (DC) Tmb = 25 °C peak source (diode forward) current Tm...