FPD750SOT343

FPD750SOT343 LOW NOISE HIGH LINEARITY PACKAGED PHEMT PACKAGE: FEATURES (1850MHZ): 0.5 dB N.F.min. 20 dBm Output Power (P1dB) 16.5 dB Small-Signal Gain (SSG) 37 dBm Output IP3 RoHS compliant (Directive 2002/95/EC) Datasheet v3.0 ROHS: 9 GENERAL DESCRIPTION: The www.DataSheet4U.com FPD750SOT343 is a packaged depletion mode pseudomorphic High Electron Mobility Transistor (pHEMT). It utilizes a 0.25 µm x 750 µm Schottky barrier Gate. The Filtronic 0.25µm process ensures class-leading noise performance. The use of a small footprint plastic package allows for cost effective system implementation. TYPICAL APPLICATIONS: 802.11a,b,g and WiMax LNAs PCS/Cellular High Linearity LNAs Other types of wireless infrastructure systems. TYPICAL PERFORMANCE1: RF PARAMETER Power at 1dB Gain Compression Small Signal Gain Power-Added Efficiency SYMBOL OP1dB SSG PAE CONDITIONS VDS = 3.3 V; IDS = 40mA VDS = 3.3 V; IDS = 40mA VDS = 3.3 V; IDS = 40mA POUT = P1dB 0.9GHZ 1.85GHZ 2.6GHZ 20 22 50 19 16.5 45 20 14 45 3.5GHZ 20.5 11 50 UNITS dBm dB % Maximum Stable Gain (|S21/S12|) Noise Figure Output Third-Order Intercept Point POUT = 9 dBm per Tone MSG N.F. OIP3 VDS = 3.3 V; IDS = 40mA VDS = 3.3 V; IDS = 40mA VDS = 3.3V; IDS = 40mA VDS = 3.3V; IDS = 80mA 24 0.5 32 35 20 0.6 31 37 18 0.7 31 35 16 0.8 32 38 dB dB dBm ELECTRICAL SPECIFICATIONS2: RF/DC PARAMETER Frequency Power at 1dB Gain Compression Small Signal Gain Saturated Drain-Source Current Transconductance Pinch-Of...