FPD750P100

0.5W PACKAGED POWER PHEMT FEATURES ♦ 26.5 dBm Linear Output Power ♦ 18.5 dB Power Gain at 2 GHz ♦ 11.5 dB Maximum Stable Gain at 10 GHz ♦ 36 dBm Output IP3 ♦ 45% Power-Added Efficiency at 2 GHz FPD750P100 www.DataSheet4U.com DESCRIPTION AND APPLICATIONS The FPD750P100 is a packaged AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor (PHEMT), featuring a 0.25 µm by 750 µm Schottky barrier gate, defined by high-resolution stepperbased photolithography. The recessed and offset Gate structure minimizes parasitics to optimize performance. The epitaxial structure and processing have been optimized for reliable high-power applications. The FPD750P100 also features Si3N4 passivation and is also available in die form and in the low cost plastic SOT89, SOT343, and DFN plastic packages. Typical applications include commercial and other narrowband and broadband high-performance amplifiers, including SATCOM uplink transmitters, PCS/Cellular low-voltage high-efficiency output amplifiers, and medium-haul digital radio transmitters. ELECTRICAL SPECIFICATIONS AT 22°C Parameter Power at 1dB Gain Compression Power Gain at P1dB Maximum Stable Gain (S21/S12) Symbol P1dB G1dB SSG Test Conditions VDS = 8 V; IDS = 50% IDSS VDS = 8 V; IDS = 50% IDSS VDS = 8 V; IDS = 50% IDSS f = 2 GHz f = 10 GHz Power-Added Efficiency Output Third-Order Intercept Point (from 15 to 5 dB below P1dB) Saturated Drain-Source Current Maximum Drain-Source Current Transconductance Gate-Source Leakage Cu...