FPD750

FPD750 0.5W POWER PHEMT FEATURES: 27.5 dBm Linear Output Power at 12 GHz 11.5 dB Power Gain at 12 GHz 14.5 dB Max Stable Gain at 12 GHz 38 dBm Output IP3 50% Power-Added Efficiency Datasheet v3.0 LAYOUT: GENERAL DESCRIPTION: The www.DataSheet4U.com FPD750 is an AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor (PHEMT), featuring a 0.25 µm by 750 µm Schottky barrier gate, defined by highresolution stepper-based photolithography. The double recessed gate structure minimizes parasitics to optimize performance. The epitaxial structure and processing have been optimized for reliable high-power applications. The FPD750 also features Si3N4 passivation and is available in the low cost plastic SOT89 SOT343 and DFN packages. TYPICAL APPLICATIONS: Narrowband and broadband highperformance amplifiers SATCOM uplink transmitters PCS/Cellular low-voltage high-efficiency output amplifiers Medium-haul digital radio transmitters ELECTRICAL SPECIFICATIONS1: PARAMETER Power at 1dB Gain Compression Maximum Stable Gain (S21/S12) Power Gain at P1dB Power-Added Efficiency Output Third-Order Intercept Point IP3 (from 15 to 5 dB below P1dB) Saturated Drain-Source Current Maximum Drain-Source Current Transconductance Gate-Source Leakage Current Pinch-Off Voltage Gate-Source Breakdown Voltage Gate-Drain Breakdown Voltage Thermal Resistivity (see Notes) IDSS IMAX GM IGSO |VP| |VBDGS| |VBDGD| Matched for optimal power; Tuned for best IP3 VDS = 1.3 V; VGS = 0 V VDS = 1.3 V;...