STK7002U

Semiconductor STK7002U N-Channel Enhancement-Mode MOSFET Description High speed switching application. Features High density cell design for low RDS(ON). Voltage controlled small signal switch www.DataSheet4U.com High saturation current capability. Ordering Information Type NO. STK7002U Marking K72 Package Code SOT-323 Outline Dimensions 2.0~2.2 1.2~1.3 unit : mm 1 1.8~2.2 1.2~1.4 3 0.2~0.4 2 0.8~1.0 0~0.1 0.1 Min. 0.1~0.2 PIN Connections 1. Gate 2. Source 3. Drain KST-3069-002 1 STK7002U Absolute maximum ratings Characteristic Drain-Source voltage Gate-Source voltage Maximum Drain current Pulsed Drain Current Power Dissipation www.DataSheet4U.com (Ta=25°C) Symbol VDSS VGS ID IDP * PD RthJA TJ , Tstg Ratings 60 ±20 115 800 200 625 -55~150 Unit V V mA mA mW °C/W °C Maximum Junction-to-Ambient Operating Junction and Storage temperature range * PW ≤ 10 ㎲, Duty cycle ≤ 1% Electrical Characteristics Characteristic Drian-Source breakdown voltage Gate-Threshold voltage Zero Gate voltage drain current Gate-body leakage Drain-Source on-resistance Forward transconductance Input capacitance Output capacitance Reverse Transfer capacitance Turn-on time Turn-off time * PW ≤ 300 ㎲, Duty cycle ≤ 1% (Ta=25°C) Symbol BVDSS VGS(th) IDSS IGSS RDS(ON) * gfs Ciss Coss Crss tON tOFF Test Condition ID=10µA, VGS=0 ID=0.25mA, VDS=VGS VDS=60V, VGS=0 VDS=0V, VGS=±20V VGS=5V, ID=50mA VGS=10V, ID=500mA VDS=10V, ID=0.2A VDS=25V, VGS=0, f=1MHz Min. Typ. Max. 60 1 80 2.0 3...