STK7002B

Semiconductor STK7002B N-Channel Enhancement-Mode MOSFET SWITCHING REGULATOR APPLICATIONS Features High Voltage: BVDSS=60V(Min.) Low Crss : Crss=3.1pF(Typ.) Low gate charge : Qg=2.8nC(Typ.) Low RDS(on) :RDS(on)=2.8Ω(Typ.) www.DataSheet4U.com Ordering Information Type NO. STK7002B Marking 72B Package Code SOT-23 Outline Dimensions unit : mm 1 3 2 PIN Connections 1. Gate 2. Source 3. Drain KSD-T5C042-000 1 STK7002B Absolute maximum ratings Characteristic Drain-source voltage Gate-source voltage Drain current (DC) Drain current (Pulsed) www.DataSheet4U.com * ** (Ta=25°C) Symbol VDSS VGSS ID (Tc=25℃) (Tc=100℃) IDP PD ② ② ① ① IAS EAS IAR EAR TJ Tstg Rating 60 ±20 380 240 1.52 350 380 3.8 380 0.1 150 -55~150 Unit V V mA mA A mW mA mJ mA mJ °C Drain Power dissipation Avalanche current (Single) Single pulsed avalanche energy Avalanche current (Repetitive) Repetitive avalanche energy Junction temperature Storage temperature range * Limited by maximum junction temperature ** Device mounted on 99.5% Alumina 10 x 8 x 0.6mm Characteristic Thermal resistance Junction-ambient Symbol Rth(J-a) Typ. - Max 357 Unit ℃/W KSD-T5C042-000 2 STK7002B Electrical Characteristics Characteristic Drain-source breakdown voltage Gate-threshold voltage Drain-source leakage current Gate-source leakage Drain-Source on-resistance www.DataSheet4U.com Forward transfer admittance (Ta=25°C) Symbol BVDSS VGS(th) IDSS IGSS ④ ④ RDS(ON) RDS(ON) gfs Ciss Coss Crss td(on) td(off) Qg Qgs...