N-Channel Enhancement-Mode MOSFET
Semiconductor
STK7002
N-Channel Enhancement-Mode MOSFET
Description
• High speed switching application.
• High densit...
Description
Semiconductor
STK7002
N-Channel Enhancement-Mode MOSFET
Description
High speed switching application.
High density cell design for low RDS(ON). Voltage controlled small signal switch www.DataSheet4U.com High saturation current capability.
Features
Ordering Information
Type NO. STK7002 Marking K702 Package Code SOT-23
Outline Dimensions
unit : mm
2.4±0.1 1.30±0.1
1
1.90 Typ. 2.9±0.1
3
0.4 Typ. 0.2 Min.
2
1.12 Max.
0~0.1
0.38
PIN Connections 1. Gate 2. Source 3. Drain
KST-2105-003
0.124
-0.03 +0.05
1
STK7002
Absolute maximum ratings
Characteristic
Drain-Source voltage Gate-Source voltage Maximum Drain current Pulsed Drain Current Power dissipation Maximum Junction-to-Ambient
www.DataSheet4U.com
(Ta=25° C)
Symbol
VDSS VGS ID IDM PD RthJA T J , T stg
Ratings
60 ±20 115 800 200 625 -55~150
Unit
V V mA mA mW °C/W °C
Operating Junction and Storage temperature range
Electrical Characteristics
Characteristic
Drian-Source breakdown voltage Gate-Threshold voltage Zero Gate voltage drain current Gate-body leakage On-state drain current
(Ta=25° C)
Symbol
BVDSS VGS(t h) IDSS IGSS ID(on)
Test Condition
ID =10µA, VGS =0 ID =0.25mA, VDS =V GS VDS =60V, V GS =0 VDS =0V, VGS =± 20V VDS =7.5V, VGS =10V VGS =5V, ID =0.05A Tc=125¡É VGS =10V, I D =0.5A Tc=125¡É VDS =10V, I D =0.2A VDS =25V, V GS =0, f=1MHz
Min.
60 1 500 -
Typ.
2.0 1000 3.2 5.8
Max.
2.5 1 ± 100 7.5 13.5 7.5 13.5 50 25 5 20 20
Unit
V V µA nA mA
Drain-Source on-resistance
RDS(ON)
80 -
2.4 4...
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