GP30B120KD-E

PD- 93818 IRGP30B120KD-E INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features Low VCE(on) Non Punch Through (NPT) Technology Low Diode VF (1.76V Typical @ 25A & 25°C) www.DataSheet4U.com 10 µs Short Circuit Capability Square RBSOA Ultrasoft Diode Recovery Characteristics Positive VCE(on) Temperature Coefficient Extended Lead TO-247AD Package C Motor Control Co-Pack IGBT VCES = 1200V G E VCE(on) typ. = 2.28V VGE = 15V, IC = 25A, 25°C N-channel Benefits Benchmark Efficiency for Motor Control Applications Rugged Transient Performance Low EMI Significantly Less Snubber Required Excellent Current Sharing in Parallel Operation Longer leads for Easier Mounting TO-247AD Absolute Maximum Ratings Parameter VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM IF @ TC = 100°C IFM VGE PD @ TC = 25°C PD @ TC = 100°C TJ TSTG Collector-to-Emitter Breakdown Voltage Continuous Collector Current (Fig.1) Continuous Collector Current (Fig.1) Pulsed Collector Current (Fig.3, Fig. CT.5) Clamped Inductive Load Current(Fig.4, Fig. CT.2) Diode Continuous Forward Current Diode Maximum Forward Current Gate-to-Emitter Voltage Maximum Power Dissipation (Fig.2) Maximum Power Dissipation (Fig.2) Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting Torque, 6-32 or M3 screw. Max. 1200 60 30 120 120 30 120 ± 20 300 120 -55 to + 150 300, (0.063 in. (1.6mm) from case) 10 lbfin (1.1Nm) Units V A V W °C Thermal Res...