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MRF5S21130R3 Dataheets PDF



Part Number MRF5S21130R3
Manufacturers Motorola
Logo Motorola
Description The RF MOSFET Line RF Power Field Effect Transistor
Datasheet MRF5S21130R3 DatasheetMRF5S21130R3 Datasheet (PDF)

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MRF5S21130/D MRF5S21130 RF Power Field Effect Transistors MRF5S21130R3 N–Channel Enhancement–Mode Lateral MOSFETs MRF5S21130S Designed for W–CDMA base station applications at frequencies from 2110 MRF5S21130SR3 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicaThe RF MOSFET Line t i o n s . To b e u s e d i n C l a s s A B f o r P C N – P C S / c e l l u l a r r a d i o a n d W L L applications. • Typical 2–carr.

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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MRF5S21130/D MRF5S21130 RF Power Field Effect Transistors MRF5S21130R3 N–Channel Enhancement–Mode Lateral MOSFETs MRF5S21130S Designed for W–CDMA base station applications at frequencies from 2110 MRF5S21130SR3 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicaThe RF MOSFET Line t i o n s . To b e u s e d i n C l a s s A B f o r P C N – P C S / c e l l u l a r r a d i o a n d W L L applications. • Typical 2–carrier W–CDMA Performance for VDD = 28 Volts, IDQ = 1200 mA, f1 = 2135 MHz, f2 = 2145 MHz, Channel Bandwidth = 3.84 MHz, Adjacent Channels Measured over 3.84 MHz BW @ f1 –5 MHz and f2 +5 MHz, Distortion Products Measured over a 3.84 MHz BW @ f1 –10 MHz and f2 +10 MHz, Peak/Avg. = 8.5 dB @ 0.01% Probability on CCDF. www.DataSheet4U.com Output Power — 28 Watts Avg. Power Gain — 13.5 dB Efficiency — 26% IM3 — –37 dBc ACPR — –39 dBc • Internally Matched, Controlled Q, for Ease of Use • High Gain, High Efficiency and High Linearity • Integrated ESD Protection • Designed for Maximum Gain and Insertion Phase Flatness • Capable of Handling 10:1 VSWR, @ 28 Vdc, 2140 MHz, 92 Watts CW Output Power • Excellent Thermal Stability • Characterized with Series Equivalent Large–Signal Impedance Parameters • Qualified Up to a Maximum of 32 VDD Operation • Available in Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel. 2170 MHz, 28 W AVG., 2 x W–CDMA, 28 V LATERAL N–CHANNEL RF POWER MOSFETs CASE 465B–03, STYLE 1 NI–880 MRF5S21130 CASE 465C–02, STYLE 1 NI–880S MRF5S21130S MAXIMUM RATINGS Rating Drain–Source Voltage Gate–Source Voltage Total Device Dissipation @ TC = 25°C Derate above 25°C Storage Temperature Range Operating Junction Temperature CW Operation Symbol VDSS VGS PD Tstg TJ CW Value 65 –0.5, +15 315 2 –65 to +150 200 92 Unit Vdc Vdc Watts W/°C °C °C Watts NOTE – CAUTION – MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed. REV 0 MOTOROLA RF DEVICE DATA  Motorola, Inc. 2002 MRF5S21130 MRF5S21130R3 MRF5S21130S MRF5S21130SR3 1 THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case Case Temperature 80°C, 92 W CW Case Temperature 80°C, 28 W CW Symbol RθJC 0.56 0.56 Max Unit °C/W ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Characteristic OFF CHARACTERISTICS Zero Gate Voltage Drain Leakage Current (VDS = 65 Vdc, VGS = 0 Vdc) Zero Gate Voltage Drain Leakage Current (VDS = 28 Vdc, VGS = 0 Vdc) Gate–Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) www.DataSheet4U.com ON CHARACTERISTICS Gate Threshold Voltage (VDS = 10 Vdc, ID = 300 µAdc) Gate Quiescent Voltage (VDS = 28 Vdc, ID = 1200 mAdc) Drain–Source On–Voltage (VGS = 10 Vdc, ID = 3 Adc) Forward Transconductance (VDS = 10 Vdc, ID = 3 Adc) DYNAMIC CHARACTERISTICS (1) Reverse Transfer Capacitance (VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Crss — 2.6 — pF VGS(th) VGS(Q) VDS(on) gfs 2.5 — — — 2.7 3.7 0.26 7.5 3.5 — 0.3 — Vdc Vdc Vdc S IDSS IDSS IGSS — — — — — — 10 1 1 µAdc µAdc µAdc Symbol Min Typ Max Unit FUNCTIONAL TESTS (In Motorola Test Fixture, 50 ohm system) 2–carrier W–CDMA, 3.84 MHz Channel Bandwidth Carriers, ACPR and IM3 measured in 3.84 MHz Bandwidth. Peak/Avg. = 8.5 dB @ 0.01% Probability on CCDF. Common–Source Amplifier Power Gain (VDD = 28 Vdc, Pout = 28 W Avg., IDQ = 1200 mA, f1 = 2112.5 MHz, f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5 MHz) Drain Efficiency (VDD = 28 Vdc, Pout = 28 W Avg., IDQ = 1200 mA, f1 = 2112.5 MHz, f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5 MHz) Third Order Intermodulation Distortion (VDD = 28 Vdc, Pout = 28 W Avg., IDQ = 1200 mA, f1 = 2112.5 MHz, f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5 MHz; IM3 measured over 3.84 MHz BW at f1 –10 MHz and f2 +10 MHz referenced to carrier channel power.) Adjacent Channel Power Ratio (VDD = 28 Vdc, Pout = 28 W Avg., IDQ = 1200 mA, f1 = 2112.5 MHz, f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5 MHz; ACPR measured over 3.84 MHz at f1 –5 MHz and f2 +5 MHz.) Input Return Loss (VDD = 28 Vdc, Pout = 28 W Avg., IDQ = 1200 mA, f1 = 2112.5 MHz, f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5 MHz) (1) Part is internally matched both on input and output. Gps 12 13.5 — dB η 24 26 — % IM3 –37 –35 dBc ACPR — –39 –37 dBc IRL — –12 –9 dB MRF5S21130 MRF5S21130R3 MRF5S21130S MRF5S21130SR3 2 MOTOROLA RF DEVICE DATA Vbias R1 + C1 R2 C3 C5 Z9 Z7 Z2 C7 C8 Z3 Z4 Z5 Z6 C6 Z10 C17 DUT Z8 Z11 Z12 Z13 C11 C9 + C13 + C15 + C20 Vsupply RF INPUT Z1 C18 Z14 Z15 Z16 RF OUTPUT C19 C10 + C2 www.DataSheet4U.com Z1 Z2 Z3 Z4 Z5 Z6, Z7 Z8 C4 C12 + C14 + C16 0.500″ x 0.083″ Microstrip 0.995″ x 0.083″ Microstrip 0.905″ x 0.083″ Microstrip 0.159″ x 1.024″ Microstrip 0.117″ x 1.024″ Microstrip 0.749″ x 0.083″ Microstrip 0.117″ x 1.000″ Microstrip Z9, Z10 Z11 Z12 Z13 Z14, Z15 Z16 PCB 0.709″ x 0.083″ Microstrip 0.415″ x 1.000″ Microstrip 0.531.


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