CYStech Electronics Corp.
Low Vcesat NPN Epitaxial Planar Transistor
BTD2444N3
Spec. No. : C223N3 Issued Date : 2003.05...
CYStech Electronics Corp.
Low Vcesat
NPN Epitaxial Planar
Transistor
BTD2444N3
Spec. No. : C223N3 Issued Date : 2003.05.26 Revised Date : 2012.10.03 Page No. : 1/8
Features
The BTD2444N3 is designed for general purpose low frequency power amplifier applications. Low VCE(sat), VCE(sat)=40mV (typical), at IC / IB = 50mA / 2.5mA Complementary to BTB1590N3 Pb-free lead plating and halogen-free package
Symbol
BTD2444N3
Outline
SOT-23
B：Base C：Collector E：Emitter
Absolute Maximum Ratings (Ta=25°C)
Parameter
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Power Dissipation Thermal Resistance, Junction to Ambient Junction Temperature Storage Temperature
Symbol
VCBO VCEO VEBO
IC Pd RθJA Tj Tstg
Note : Single pulse, Pw=10ms
BTD2444N3
Limits
40 25 6 1.5 225 556 150 -55~+150
Unit
V V V A mW
°C/W °C °C
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C223N3 Issued Date : 2003.05.26 Revised Date : 2012.10.03 Page No. : 2/8
Characteristics (Ta=25°C)
Symbol
BVCBO BVCEO BVEBO
ICBO IEBO *VCE(sat)1 *VCE(sat)1 *VCE(sat)2 *VBE(on) *hFE1 *hFE2 fT Cob
Min.
40 25 6 180 40 100 -
Typ.
40 0.15 0.25 -
Max.
0.5 0.5 60 0.3 0.5 1 560 15
Unit
V V V μA μA mV V V V MHz pF
Test Conditions
IC=100μA, IE=0 IC=2mA, IB=0 IE=100μA, IC=0 VCB=30V, IE=0 VEB=6V, IC=0 IC=50mA, IB=2.5mA IC=400mA, IB=20mA IC=800mA, IB=80mA VCE=1V, IC=10mA VCE=1V, IC=100mA VCE=1V, IC=600mA VCE=5V, IC=50mA, f=100MHz VCB=10V, f=1MHz
*Pulse Test : Pul...
