BTD2150N3

CYStech Electronics Corp. Low VCE(sat) NPN Epitaxial Planar Transistor BTD2150N3 BVCEO IC RCE(SAT) typ. Spec. No. : C848N3-A Issued Date : 2004.03.26 Revised Date : 2018.02.07 Page No. : 1/9 50V 4A 90mΩ Features Low VCE(sat), typically 0.18V at IC / IB = 2A / 0.1A Excellent current gain characteristics Complementary to BTB1424N3 Pb-free lead plating and halogen-free package Symbol BTD2150N3 Outline C SOT-23 B：Base C：Collector E：Emitter E B Ordering Information Device BTD2150N3-X-T1-G Package SOT-23 (Pb-free lead plating and halogen-free package) Shipping 3000 pcs / tape & reel Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, T1 : 3000 pcs / tape & reel,7” reel Product rank, zero for no rank products Product name BTD2150N3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C848N3-A Issued Date : 2004.03.26 Revised Date : 2018.02.07 Page No. : 2/9 Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Power Dissipation Symbol VCBO VCEO VEBO IC ICP PD Thermal Resistance, Junction to Ambient Operating Junction and Storage Temperature Range RθJA Tj ; Tstg Limit 80 50 6 4 7 (Note 1) 225 660 (Note 2) 556 190 -55~+150 Unit V A mW °C/W °C Note : 1. Single Pulse Pw≦350μs, Duty≦2%. 2. Device mounted on an FR-4 PCB, single sided copper, tin plated, mounting p...