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BTD2118LJ3 Dataheets PDF



Part Number BTD2118LJ3
Manufacturers Cystech Electonics
Logo Cystech Electonics
Description NPN Epitaxial Planar Transistor
Datasheet BTD2118LJ3 DatasheetBTD2118LJ3 Datasheet (PDF)

CYStech Electronics Corp. Low Vcesat NPN Epitaxial Planar Transistor BTD2118LJ3 Spec. No. : C850J3 Issued Date : 2004.02.27 Revised Date :2006.07.04 Page No. : 1/5 Features • Low VCE(sat), VCE(sat)=0.2V (typical), at IC / IB = 3A / 0.1A • Excellent DC current gain characteristics • Complementary to BTB1412LJ3 • Pb-free package Symbol BTD2118LJ3 Outline TO-252 B:Base C:Collector E:Emitter BCE Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emi.

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CYStech Electronics Corp. Low Vcesat NPN Epitaxial Planar Transistor BTD2118LJ3 Spec. No. : C850J3 Issued Date : 2004.02.27 Revised Date :2006.07.04 Page No. : 1/5 Features • Low VCE(sat), VCE(sat)=0.2V (typical), at IC / IB = 3A / 0.1A • Excellent DC current gain characteristics • Complementary to BTB1412LJ3 • Pb-free package Symbol BTD2118LJ3 Outline TO-252 B:Base C:Collector E:Emitter BCE Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Power Dissipation Junction Temperature Storage Temperature Note : 1. Single Pulse Pw≦350µs, Duty≦2%. Symbol VCBO VCEO VEBO IC ICP PD(TA=25℃) PD(TC=25℃) Tj Tstg Limits 40 15 6 5 8 (Note 1) 1 10 150 -55~+150 Unit V V V A A W W °C °C BTD2118LJ3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C850J3 Issued Date : 2004.02.27 Revised Date :2006.07.04 Page No. : 2/5 Characteristics (Ta=25°C) Symbol Min. Typ. BVCBO 40 - BVCEO 15 - BVEBO 6 - ICBO - - IEBO - - *VCE(sat) - 0.25 *hFE1 180 - *hFE2 160 - fT - 150 Cob - Max. 0.1 0.1 0.5 820 50 Unit V V V µA µA V MHz pF Test Conditions IC=50µA, IB=0 IC=1mA, IB=0 IE=50µA, IC=0 VCB=40V, IE=0 VEB=5V,IC=0 IC=3A, IB=0.1A VCE=2V, IC=500mA VCE=2V, IC=2A VCE=6V, IC=50mA, f=200MHz VCB=20V, IE=0A, f=1MHz *Pulse Test : Pulse Width ≤380µs, Duty Cycle≤2% Classification Of hFE1 Rank Range R 180~390 S 270~560 T 390~820 Ordering Information Device BTD2118LJ3 Package TO-252 (Pb-free) Shipping 2500 pcs / Tape & Reel Marking 2118L BTD2118LJ3 CYStek Product Specification CYStech Electronics Corp. Characteristic Curves Spec. No. : C850J3 Issued Date : 2004.02.27 Revised Date :2006.07.04 Page No. : 3/5 Current Gain vs Collector Current 1000 Saturation Voltage vs Collector Current 1 VCE=5V VCESAT@IC=100IB 0.1 Saturation Voltage---(V) Current Gain---HFE 100 1 VCE=2V VCE=1V 10 100 1000 Collector Current---IC(mA) 0.01 10000 0.001 100 VCESAT@IC=60IB VCESAT@IC=30IB 1000 Collector Current---IC(mA) 10000 Saturation Voltage---(mV) 10000 Saturation Voltage vs Collector Current VBE(SAT) @ IC=10IB 1000 100 1 10 100 1000 Collector Current---IC(mA) 10000 Power Dissipation---PD(W) 1.2 1 0.8 0.6 0.4 0.2 0 0 Power Derating Curve 50 100 150 Ambient Temperature---TA(℃) 200 Power Dissipation---PD(W) 12 10 8 6 4 2 0 0 Power Derating Curve 50 100 150 Case Temperature---TC(℃) 200 BTD2118LJ3 CYStek Product Specification Reel Dimension CYStech Electronics Corp. Spec. No. : C850J3 Issued Date : 2004.02.27 Revised Date :2006.07.04 Page No. : 4/5 Carrier Tape Dimension BTD2118LJ3 CYStek Product Specification CYStech Electronics Corp. TO-252 Dimension Spec. No. : C850J3 Issued Date : 2004.02.27 Revised Date :2006.07.04 Page No. : 5/5 AC B L F D G EK 3 H 2 I 1 J Marking: 2118L Style: Pin 1.Base 2.Collector 3.Emitter 3-Lead TO-252 Plastic Surface Mount Package CYStek Package Code: J3 DIM Inches Min.


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