BTD2098M3

CYStech Electronics Corp. Low Vcesat NPN Epitaxial Planar Transistor BTD2098M3 Spec. No. : C847M3 Issued Date : 2003.04.17 Revised Date :2014.10.16 Page No. : 1/6 Features Low VCE(sat), VCE(sat)=0.35 V (typical), at IC / IB = 3A / 0.1A Excellent DC current gain characteristics Complementary to BTB1386M3 Pb-free lead plating and halogen-free package Symbol BTD2098M3 Outline SOT-89 B：Base C：Collector E：Emitter BCE Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Power Dissipation Thermal resistance, junction to ambient Thermal resistance, junction to case Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC Pd RθJA RθJC Tj Tstg Limits 40 30 6 5 8 0.6 1 2 125 62.5 16 150 -55~+150 *1 *2 *3 *2 *3 Note : *1 Single pulse , Pw=10ms *2 Printed circuit board, glass epoxy board, 1.7mm thick with collector copper plating 10mm*10mm. *3 When mounted on a 40*40*0.7mm ceramic board. Unit V V V A A W °C/W °C °C BTD2098M3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C847M3 Issued Date : 2003.04.17 Revised Date :2014.10.16 Page No. : 2/6 Ordering Information Device BTD2098M3-S-T2-G Package Shipping SOT-89 (Pb-free lead plating and halogen-free package) 1000 pcs / Tape & Reel Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, T2 :1000 pcs/tape & ...