BTD2097LI3

CYStech Electronics Corp. Low Vcesat NPN Epitaxial Planar Transistor Spec. No. : C850I3 Issued Date : 2004.02.27 Revised Date : Page No. : 1/4 BTD2097LI3 Features Low VCE(sat), VCE(sat)=0.25 V (typical), at IC / IB = 3A / 0.1A Excellent DC current gain characteristics www.DataSheet4U.com Complementary to BTB1326LI3 Symbol BTD2097LI3 Outline TO-251 B：Base C：Collector E：Emitter B C E Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Power Dissipation Junction Temperature Storage Temperature Note : 1. Single Pulse Pw≦350µs, Duty≦2%. Symbol VCBO VCEO VEBO IC ICP PD(TA=25℃) PD(TC=25℃) Tj Tstg Limits 40 15 6 5 8 (Note 1) 1 10 150 -55~+150 Unit V V V A A W W °C °C BTD2097LI3 CYStek Product Specification CYStech Electronics Corp. Characteristics (Ta=25°C) Symbol BVCBO BVCEO BVEBO ICBO IEBO *VCE(sat) www.DataSheet4U.com *hFE1 *hFE2 fT Cob Min. 40 15 6 180 160 Typ. 0.25 150 Max. 0.1 0.1 0.5 820 50 Unit V V V µA µA V MHz pF Spec. No. : C850I3 Issued Date : 2004.02.27 Revised Date : Page No. : 2/4 Test Conditions IC=50µA, IB=0 IC=1mA, IB=0 IE=50µA, IC=0 VCB=40V, IE=0 VEB=5V, IC=0 IC=3A, IB=0.1A VCE=2V, IC=500mA VCE=2V, IC=2A VCE=6V, IC=50mA, f=200MHz VCB=20V, IE=0A, f=1MHz *Pulse Test : Pulse Width ≤380µs, Duty Cycle≤2% Classification Of hFE1 Rank Range R 180~390 S 270~560 T 390~820 BTD2097LI3 CYStek Product Specification CYStech Electronics Corp. Cha...