CYStech Electronics Corp.
Low Vcesat NPN Epitaxial Planar Transistor
BTD2061FP
Spec. No. : C819FP Issued Date : 2005.09...
CYStech Electronics Corp.
Low Vcesat
NPN Epitaxial Planar
Transistor
BTD2061FP
Spec. No. : C819FP Issued Date : 2005.09.07 Revised Date :2012.06.29 Page No. : 1/5
Features
Low saturation voltage, typically VCE(sat)=0.25V at IC/IB=2A/0.2A. Excellent DC current gain characteristics. Wide SOA(safe operating area). Pb-free package.
Symbol
BTD2061FP
Outline
TO-220FP
B：Base C：Collector E：Emitter
BCE
Absolute Maximum Ratings (Ta=25°C)
Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Power Dissipation @ TA=25℃ Power Dissipation @ TC=25℃ Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Junction Temperature Storage Temperature
Note : 1. Single Pulse , Pw≦380μs,Duty≦2%.
BTD2061FP
Symbol
VCBO VCEO VEBO
IC ICP PD
PD
RθJA RθJC Tj Tstg
Limits
200 80 5 4 7 (Note 1) 2
30
62.5 4.167 150 -55~+150
Unit V V V
A
W
°C/W °C/W
°C °C
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C819FP Issued Date : 2005.09.07 Revised Date :2012.06.29 Page No. : 2/5
Characteristics (Ta=25°C)
Symbol
BVCBO
BVCEO BVEBO
ICBO IEBO *VCE(sat) *VCE(sat) *VBE(sat) *hFE *hFE fT Cob
Min.
200
80 5 100 50 -
Typ.
-
0.3 0.36 8 70
Max.
-
1 100 0.5 0.6 1.5 320 -
Unit
V
V V μA nA V V V MHz pF
Test Conditions
IC=50μA, IE=0 IC=10mA, IB=0 IE=50μA, IB=0 VCB=180V, IB=0 VEB=5V, IC=0 IC=2A, IB=0.2A IC=3A, IB=0.3A IC=2A, IB=0.2A VCE=5V, IC=500mA VCE=5V, IC=3A VCE=5V, IC=500mA, f=5MHz VCB=...
