MA856

Band Switching Diodes MA2C856 (MA856) Silicon epitaxial planar type Unit: mm For band switching s Features Extra-small DHD envelope, allowing to insert into a 5 mm pitch hole Less voltage dependence of the terminal capacitance Ct Low forward dynamic resistance rf Optimum for a band switching of tuner www.DataSheet4U.com 0.2 max. 1 Cathode φ 1.6±0.2 2 Anode s Absolute Maximum Ratings Ta = 25°C Parameter Reverse voltage (DC) Forward current (DC) Operating ambient temperature Storage temperature Symbol VR IF Topr Tstg Rating 35 100 −25 to +85 −55 to +100 Unit V mA °C °C 1: Cathode 2: Anode DO-34-A1 Package s Electrical Characteristics Ta = 25°C Parameter Reverse current (DC) * Symbol IR VF Ct rf VR = 33 V IF = 100 mA Conditions Min Typ Max 100 1 2 0.85 φ 0.40±0.05 13.0 min. 2.3±0.3 2.2±0.3 13.0 min. Unit nA V pF Ω Forward voltage (DC) Terminal capacitance Forward dynamic resistance VR = 15 V, f = 1 MHz IF = 3 mA, f = 100 MHz Note) 1. Rated input/output frequency: 100 MHz 2. * : Measurement in light shielded condition s Cathode Mark Type No. Color MA2C856 Yellow Note) The part number in the parenthesis shows conventional part number. Publication date: April 2002 SKG00002BED 1 MA2C856 I F  VF 102 IR  V R 103 Ta = 125°C 102 102 103 IR  T a Forward current IF (mA) Reverse current IR (nA) Reverse current IR (nA) 10 75°C 10 VR = 25 V 10 10 V 1 1 1 10−1 75°C 10−2 0 Ta = 125°C 0.2 0.4 0.6 25°C −20°C 0.8 1.0 10−1 25°C 10−2 0 10 20 30 40 50...