SPT IGBT
SID200S12
SPT IGBT Modules
Dimensions in mm (1mm = 0.0394")
www.DataSheet4U.com
Absolute Maximum Ratings
Symbol IGBT V...
Description
SID200S12
SPT IGBT Modules
Dimensions in mm (1mm = 0.0394")
www.DataSheet4U.com
Absolute Maximum Ratings
Symbol IGBT VCES IC ICRM VGES TVj,(Tstg) Conditions
TC = 25oC, unless otherwise specified Values
1200
Units V A A
o
TC= 25(80) C TC= 25(80)oC, tP =1ms
_ Tstg TOPERATION < AC, 1min
o
310(220) 620(440) _ +20 _ 40...+150(125) 4000 190(130) 620(440) 1450
V C V
Visol Inverse Diode IF=-IC TC= 25(80)oC TC= 25(80)oC, tP =1ms IFRM IFSM tP =10ms; sin.;Tj=150 oC
A A A
SID200S12
SPT IGBT Modules
Characteristics
Symbol IGBT VGE(th) ICES V CE(TO) www.DataSheet4U.com rCE VCE(sat) Cies Coes Cres LCE RCC'+EE' Conditions VGE = VCE, IC = 6mA VGE = 0; VCE = VCES; Tj = 25(125)oC Tj = 25(125)oC VGE = 15V, Tj = 25(125)oC IC =150A; VGE = 15V; chip level under following conditions VGE = 0, VCE = 25V, f = 1MHz TC = 25oC, unless otherwise specified min. 4.8 typ. max. Units V mA V m V nF 20 res., terminal-chip TC = 25(125) C under following conditions: VCC = 600V, IC = 150A RGon = RGoff = 7 , Tj = 125oC VGE = ± 15V
o
5.5 6.45 0.2 0.6 1(0.9) 1.15(1.05) 6(8) 8(10) 1.9(2.1) 2.35(2.55) 13 2 2 0.35(0.5) 125 50 620 55 18(15) 2(1.8) 1.1 6 190 24 8 0.095 0.25 0.038 2.5 1.2 8.7
nH m ns ns ns ns mJ V V m A uC mJ K/W K/W K/W Nm Nm g
td(on) tr td(off) tf Eon(Eoff) Inverse Diode under following conditions: VF = VEC IF = 150A; VGE = 0V; Tj = 25(125)oC V(TO) Tj = 25(125)oC rT Tj = 25(125)oC IRRM IF = 150A; Tj = 125oC Qrr di/dt = 4800A/us Err VGE = V Thermal Characteristics Rth(j-c) per IGBT Rth(j-c)D ...
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