STJ001SF

Semiconductor STJ001SF P-channel Trench MOSFET Portable Equipment Application. Notebook Application. Features Low VGS(th) : VGS(th)=-0.6~-1.4V Small footprint due to small package Low RDS (ON) : RDS (ON)= 68mΩ (Typ.) www.DataSheet4U.com Ordering Information Type NO. STJ001SF Marking J01 Package Code SOT-23F Outline Dimensions unit : mm 2.30~2.50 1.50~1.70 1 2.80~3.00 1.90 Typ. 3 2 0.45 Max. 0.10 Max. 0.20 Max. 0.80~1.00 PIN 1. 2. 3. Connections Gate Source Drain KSD-T5C037-000 1 STJ001SF Absolute maximum ratings Characteristic Drain-source voltage Gate-source voltage Drain current (DC) ** * ** (Ta=25°C) Symbol VDSS VGSS ID IDP PD ② ② ① ① IAS EAS IAR EAR TJ Tstg Rating -20 ±12 -2.8 -11.2 0.5 -2.8 28 -2.8 1.3 150 -55~150 Unit V V A A W A mJ A mJ °C Drain current (Pulsed) www.DataSheet4U.com Total Power dissipation Avalanche current (Single) Single pulsed avalanche energy Avalanche current (Repetitive) Repetitive avalanche energy Junction temperature Storage temperature range * Limited by maximum junction temperature ** Device mounted on a glass-epoxy board Characteristic Thermal resistance Junction-ambient Symbol Rth(J-a) ** Typ. - Max 250 Unit ℃/W KSD-T5C037-000 2 STJ001SF P-CH Electrical Characteristics Characteristic Drain-source breakdown voltage Gate threshold voltage Drain-source cut-off current Gate leakage current Drain-source on-resistance Forward transfer conductance Input capacitance Output capacitance Reverse transfer capacitance Tu...