MRF372

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MRF372/D The RF MOSFET Line RF Power Field-Effect Transistor N–Channel Enhancement–Mode Lateral MOSFET Designed for broadband commercial and industrial applications at frequencies from 470 – 860 MHz. The high gain and broadband performance of this device makes it ideal for large–signal, common source amplifier applications in 32 volt transmitter equipment. Typical Narrowband Two–Tone Performance @ f1 = 857 MHz, f2 = 863 MHz, 32 Volts Output Power – 180 Watts PEP Power Gain – 17 dB Efficiency – 36% www.DataSheet4U.com IMD – –35 dBc Typical Broadband Two–Tone Performance @ f1 = 857 MHz, f2 = 863 MHz, 32 Volts Output Power – 180 Watts PEP Power Gain – 14.5 dB Efficiency – 37% IMD – –31 dBc Internally Matched Integrated ESD Protection 100% Tested for Load Mismatch Stress at All Phase Angles with 3:1 VSWR @ 32 Vdc, f1 = 857 MHz, f2 = 863 MHz, 180 Watts PEP Excellent Thermal Stability MAXIMUM RATINGS (1) Rating Drain–Source Voltage Gate–Source Voltage Drain Current – Continuous Total Device Dissipation @ TC = 25°C Derate above 25°C Storage Temperature Range Operating Junction Temperature Symbol VDSS VGS ID PD Tstg TJ MRF372 470 – 860 MHz, 180 W, 32 V LATERAL N–CHANNEL BROADBAND RF POWER MOSFET CASE 375G–03, STYLE 2 Value 68 +15, – 0.5 17 350 2.0 – 65 to +150 200 Unit Vdc Vdc Adc W W/°C °C °C ESD PROTECTION CHARACTERISTICS Test Conditions Human Body Model Machine Model Class 1 (Typical) M3 (Typical) T...