SEMICONDUCTOR TECHNICAL DATA
Order this document by MRF323/D
The RF Line
NPN Silicon RF Power Transistor
. . . design...
SEMICONDUCTOR TECHNICAL DATA
Order this document by MRF323/D
The RF Line
NPN Silicon RF Power
Transistor
. . . designed primarily for wideband large–signal driver and predriver amplifier stages in the 200–500 MHz frequency range. Guaranteed Performance at 400 MHz, 28 V Output Power = 20 Watts Power Gain = 10 dB Min Efficiency = 50% Min 100% Tested for Load Mismatch at all Phase Angles with 30:1 VSWR Gold Metallization System for High Reliability
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MRF323
20 W, 400 MHz RF POWER
TRANSISTOR NPN SILICON
Computer–Controlled Wirebonding Gives Consistent Input Impedance
MAXIMUM RATINGS
Rating Collector–Emitter Voltage Collector–Base Voltage Emitter–Base Voltage Collector Current — Continuous Collector Current — Peak Total Device Dissipation @ TC = 25°C (1) Derate above 25°C Storage Temperature Range Symbol VCEO VCBO VEBO IC PD Tstg Value 33 60 4.0 2.2 3.0 55 310 –65 to +150 Unit Vdc Vdc Vdc Adc Watts mW/°C °C CASE 244–04, STYLE 1
THERMAL CHARACTERISTICS
Characteristic Thermal Resistance, Junction to Case Symbol RθJC Max 3.2 Unit °C/W
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage (IC = 20 mAdc, IB = 0) Collector–Emitter Breakdown Voltage (IC = 20 mAdc, VBE = 0) Collector–Base Breakdown Voltage (IC = 20 mAdc, IE = 0) Emitter–Base Breakdown Voltage (IE = 2.0 mAdc, IC = 0) Collector Cutoff Current (VCB = 30 Vdc, IE = 0) V(BR)CEO V(BR)CES V(B...