MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MRF3094/D
The RF Line
Microwave Linear Power Transistor...
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MRF3094/D
The RF Line
Microwave Linear Power
Transistors
Designed for Class A, common emitter linear power amplifiers. Specified 20 Volt, 1.6 GHz Characteristics Output Power — 0.5, 0.8, 1.6 Watts Gain — 9.0 – 12 dB Low Parasitic Microwave Stripline Package Gold Metallization Diffused Emitter Ballast Resistors Circuit board photomaster available upon request by contacting RF Tactical Marketing in Phoenix, AZ.
MRF3094 MRF3095
9.0 – 12 dB 1.55 – 1.65 GHz 0.5 – 1.6 WATTS MICROWAVE LINEAR POWER
TRANSISTORS
www.DataSheet4U.com
CASE 328A–03, STYLE 2
MAXIMUM RATINGS
Rating Collector Base Voltage Emitter Base Voltage Collector Emitter Voltage Collector Current Operating Junction Temperature Storage Temperature MRF3094, 3095 Symbol VCES VEBO VCEO IC TJ Tstg Limit 50 3.5 22 0.4 200 – 65 to +150 Unit Vdc Vdc Vdc Adc °C °C
THERMAL CHARACTERISTICS
Max Ch Characteristic i i Thermal Resistance, Junction to Case S b l Symbol RθJC MRF3094 40 MRF3095 35 U i Unit °C/W
REV 8
RF DEVICE DATA ©MOTOROLA Motorola, Inc. 1997
MRF3094 MRF3095 1
ELECTRICAL CHARACTERISTICS
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage (IC = 10 mA) Emitter Base Breakdown Voltage (IE = 0.25 mA) Collector Base Breakdown Voltage (IC = 1.0 mA) Collector–Emitter Breakdown Voltage (IC = 10 mA) Collector Cutoff Current (VCB = 28 V) V(BR)CES MRF3094, MRF3095 V(BR)EBO MRF3094, MRF3095 V(BR)CBO MRF3094,...
