K1359

2SK1359 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSII ) .5 2SK1359 DC−DC Converter and Motor Drive Applications z Low drain−source ON resistance z High forward transfer admittance z Low leakage current z Enhancement mode www.DataSheet4U.com Unit: mm : RDS (ON) = 3.0 Ω (typ.) : |Yfs| = 2.0 S (typ.) : IDSS = 300 μA (max) (VDS = 800 V) : Vth = 1.5~3.5 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta = 25°C) Characteristics Drain−source voltage Drain−gate voltage (RGS = 20 kΩ) Gate−source voltage Drain current DC (Note 1) Symbol VDSS VDGR VGSS ID IDP PD Tch Tstg Rating 1000 1000 ±30 5 15 125 150 −55~150 Unit V V V A W °C °C 1. GATE 2. DRAIN (HEAT SINK) 3. SOURCE JEDEC JEITA TOSHIBA ― ― 2-16C1B Pulse (Note 1) Drain power dissipation (Tc = 25°C) Channel temperature Storage temperature range Weight: 4.6 g (typ.) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Thermal Characteristics Characteristics Therma...