2SK4059TK

2SK4059TK TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK4059TK For ECM Application for compact ECM 0.22±0.05 1.2±0.05 0.8±0.05 0.32±0.05 3 2 0.1±0.05 Unit: mm Absolute Maximum Ratings (Ta=25°C) 0.45 0.45 1.4±0.05 www.DataSheet4U.com Characteristic Symbol VGDO IG PD Tj Tstg Rating -20 10 100 125 −55~125 Unit V mA mW °C Gate-Drain voltage Gate Current Drain power dissipation (Ta = 25°C) Junction Temperature Storage temperature range Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). 0.395±0.03 °C 0.9±0.1 1 TESM3 1.Drain 2.Source 3.Gate 2-1R1A JEDEC JEITA TOSHIBA Weight: 2.2mg (typ.) IDSS CLASSIFICATION A-Rank 140~240µA B-Rank 210~350µA BK-Rank 210~400µA C-Rank 320~500µA Marking Type Name Equivalent Circuit D 8 IDSS Classification Symbol A :A -Rank B :B-Rank BK-Rank C :C-Rank G S 1 2007-11-01 2SK4059TK Electrical Characteristics (Ta=25°C) Characteristic Symbol Test Condition A Drain Current...