(MT8VDDT3232U / MT8VDDT6432U) 100-Pin DDR Sdram Dimms
ADVANCE‡
128MB, 256MB (x32) 100-PIN DDR DIMM
DDR SDRAM DIMM MODULE
Features
• 100-pin, dual in-line memory module (DIM...
Description
ADVANCE‡
128MB, 256MB (x32) 100-PIN DDR DIMM
DDR SDRAM DIMM MODULE
Features
100-pin, dual in-line memory module (DIMM) Fast data transfer rate PC2100 and PC2700 Utilizes 266 MT/s or 333 MT/s DDR SDRAM www.DataSheet4U.com components 128MB (32 Meg x 32) and 256MB (64 Meg x 32) VDD = VDDQ = +2.5V 2.5V I/O (SSTL_2 compatible) Commands entered on each positive CK edge DQS edge-aligned with data for READs; centeraligned with data for WRITEs Internal, pipelined double data rate (DDR) architecture; two data accesses per clock cycle Bidirectional data strobe (DQS) transmitted/ received with data—i.e., source-synchronous data capture Differential clock inputs CK and CK# Four internal device banks for concurrent operation Programmable burst lengths: 2, 4, or 8 Auto precharge option Serial Presence Detect (SPD) with EEPROM Programmable READ CAS latency Auto Refresh and Self Refresh Modes 15.625µs (128MB), 7.8125µs (256MB) maximum average periodic refresh interval
MT8VDDT3232U – 128MB MT8VDDT6432U – 256MB
For the latest data sheet, please refer to the Micronâ Web site: www.micron.com/moduleds
Figure 1:
100-Pin DIMM (MO-161)
OPTIONS
Package 100-pin DIMM (gold) Frequency/CAS Latency 6ns/167 MHz (333MT/s) CL = 2.5 7.5ns/133 MHz (266 MT/s) CL = 2.5
MARKING
G -6 -75
Table 1:
Address Table
MT8VDDT3232U MT8VDDT6432U 4K 8K (A0–A11) 4 (BA0, BA1) 16 Meg x 8 1K (A0–A9) 2 (S0#, S1#) 8K 8K (A0–A12) 4 (BA0, BA1) 32 Meg x 8 1K (A0–A9) 2 (S0#, S1#)
Refresh ...
Similar Datasheet