TOSHIBA Transistor Silicon PNP Epitaxial Type
2SA1837
Power Amplifier Applications Driver Stage Amplifier Applications
...
TOSHIBA
Transistor Silicon
PNP Epitaxial Type
2SA1837
Power Amplifier Applications Driver Stage Amplifier Applications
2SA1837
Unit: mm
High transition frequency: fT = 70 MHz (typ.) Complementary to 2SC4793
Maximum Ratings (Tc = 25°C)
Characteristics
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Ta = 25°C Tc = 25°C
Junction temperature
Storage temperature range
Symbol
VCBO VCEO VEBO
IC IB
PC
Tj Tstg
Rating
−230 −230
−5 −1 −0.1 2.0 20 150 −55 to 150
Electrical Characteristics (Tc = 25°C)
Unit V V V A A
W
°C °C
JEDEC
―
JEITA
―
TOSHIBA
2-10R1A
Weight: 1.7 g (typ.)
Characteristics
Collector cut-off current Emitter cut-off current Collector-emitter breakdown voltage DC current gain Collector-emitter saturation voltage Base-emitter voltage Transition frequency Collector output capacitance
Symbol
Test Condition
ICBO IEBO V (BR) CEO hFE VCE (sat) VBE
fT Cob
VCB = −230 V, IE = 0 VEB = −5 V, IC = 0 IC = −10 mA, IB = 0 VCE = −5 V, IC = −100 mA IC = −500 mA, IB = −50 mA VCE = −5 V, IC = −500 mA VCE = −10 V, IC = −100 mA VCB = −10 V, IC = 0, f = 1 MHz
Min Typ. Max Unit
― ― −1.0 µA
― ― −1.0 µA
−230 ―
―
V
100 ― 320
―
― −1.5
V
―
― −1.0
V
― 70 ― MHz
― 30 ― pF
Marking
A1837
Part No. (or abbreviation code) Lot No.
A line indicates lead (Pb)-free package or lead (Pb)-free finish.
1
2004-07-26
Collector current IC (A)
−1.0 −0.8 −0.6 −0.4 −0.2
0 0
IC – VCE
−20 −...