UPF1080

UPF1080 80W, 1.0 GHz, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral MOSFET This device is designed for base station applications up to frequencies of 1.0 GHz. Rater with a minimum output power of 80W, it is ideal for CDMA, TDMA, GSM, FM, Single or MultiCarrier Power Amplifiers in Class A or AB operation. www.DataSheet4U.com ALL GOLD metal system for highest reliability. Industry standard package. Low intermodulation distortion of –30dBc at 80W (PEP). Package Type 440095 PN: UPF1080F Package Type 440134 PN: UPF1080P Page 1 of 10 UPF1080 Rev. 2 UPF1080 Maximum Ratings Rating Drain to Source Voltage, gate connected to source Gate to Source Voltage Total Device Dissipation @ Tcase = 70oC Derate above 70oC Storage Temperature Range Operating Junction Temperature www.DataSheet4U.com Symbol BVDSS BVGSS PD TSTG TJ Value 65 +/- 20 118 0.9 -65 to +150 200 Unit Volts Volts Watts W/oC o C o C Thermal Characteristics Characteristics Thermal Resistance, Junction to Case Symbol Θjc Typical 1.1 o Unit C/W Electrical DC Characteristics (TC =25°C unless otherwise specified) Rating Drain to Source Voltage, gate connected to source (VGS = 0, IDS = 1mA) Drain to Source Leakage current (VDS = 28V, VGS = 0) Gate to Source Leakage current (VGS = 20V, VDS = 0) Threshold Voltage (VDS = 10V, IDS = 1mA) Gate Quiescent Voltage (VDS = 26 V, IDS = 500mA) Drain to Source On Voltage (VGS = 10V, IDS = 1A Forward Transconductance (VDS = 10V, ID = 5A) Symbol BVDSS IDSS IGSS VTH V...