Broadband RF Power N-Channel Enhancement-Mode Lateral DMOS
UPF1060
60W, 1.0 GHz, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral MOSFET
This device is designed for base ...
Description
UPF1060
60W, 1.0 GHz, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral MOSFET
This device is designed for base station applications up to frequencies of 1.0 GHz. Rater with a minimum output power of 60W, it is ideal for CDMA, TDMA, GSM, FM, Single or MultiCarrier Power Amplifiers in Class A or AB operation.
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ALL GOLD metal system for highest reliability. Industry standard package. Low intermodulation distortion of –30dBc at 60W (PEP).
Package Type 440095 PN: UPF1060F
Package Type 440134 PN: UPF1060P
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UPF1060 Rev. 2
UPF1060
Maximum Ratings
Rating Drain to Source Voltage, gate connected to source Gate to Source Voltage Total Device Dissipation @ Tcase = 70oC Derate above 70oC Storage Temperature Range Operating Junction Temperature
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Symbol BVDSS BVGSS PD TSTG TJ
Value 65 +/- 20 118 0.9 -65 to +150 200
Unit Volts Volts Watts W/oC o C o C
Thermal Characteristics
Characteristics Thermal Resistance, Junction to Case Symbol Θjc Typical 1.1
o
Unit C/W
Electrical DC Characteristics (TC =25°C unless otherwise specified)
Rating Drain to Source Voltage, gate connected to source (VGS = 0, IDS = 1mA) Drain to Source Leakage current (VDS = 28V, VGS = 0) Gate to Source Leakage current (VGS = 20V, VDS = 0) Threshold Voltage (VDS = 10V, IDS = 1mA) Gate Quiescent Voltage (VDS = 26 V, IDS = 400mA) Drain to Source On Voltage (VGS = 10V, IDS = 1A Forward Transconductance (VDS = 10V, ID = 5A) Symbol BVDSS IDSS IGSS VTH VG...
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