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60N03L-10 Dataheets PDF



Part Number 60N03L-10
Manufacturers STMicroelectronics
Logo STMicroelectronics
Description N-CHANNEL Power MOSFET
Datasheet 60N03L-10 Datasheet60N03L-10 Datasheet (PDF)

STB60N03L-10 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR PRELIMIRARY DATA TYPE STB60N03L-10 www.DataSheet4U.com s s s s s s s s V DSS 30 V R DS(on) < 0.01 Ω ID 60 A s s TYPICAL RDS(on) = 0.0085 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC LOW GATE CHARGE HIGH CURRENT CAPABILITY 175 oC OPERATING TEMPERATURE APPLICATION ORIENTED CHARACTERIZATION THROUGH-HOLE I2PAK (TO-262) POWER PACKAGE IN TUBE (SUFFIX "-1") SURFACE-MOUNTING D2PACK (TO-263) POW.

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STB60N03L-10 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR PRELIMIRARY DATA TYPE STB60N03L-10 www.DataSheet4U.com s s s s s s s s V DSS 30 V R DS(on) < 0.01 Ω ID 60 A s s TYPICAL RDS(on) = 0.0085 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC LOW GATE CHARGE HIGH CURRENT CAPABILITY 175 oC OPERATING TEMPERATURE APPLICATION ORIENTED CHARACTERIZATION THROUGH-HOLE I2PAK (TO-262) POWER PACKAGE IN TUBE (SUFFIX "-1") SURFACE-MOUNTING D2PACK (TO-263) POWER PACKAGE IN TUBE (NO SUFFIX) OR IN TAPE & REEL (SUFFIX "T4") 3 12 3 1 I2PAK TO-262 D2PAK TO-263 APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING s SOLENOID AND RELAY DRIVERS s REGULATORS s DC-DC & DC-AC CONVERTERS s AUTOMOTIVE ENVIRONMENT (INJECTION, ABS, AIR-BAG, LAMPDRIVERS, Etc.) s INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol V DS VDGR V GS ID ID I DM ( • ) P tot T stg Tj Parameter Drain-source Voltage (V GS = 0) Drain- gate Voltage (R GS = 20 k Ω ) Gate-source Voltage Drain Current (continuous) at T c = 25 C Drain Current (continuous) at T c = 100 o C Drain Current (pulsed) Total Dissipation at T c = 25 C Derating Factor Storage Temperature Max. Operating Junction Temperature o o Value 30 30 ± 20 60 42 240 150 1 -65 to 175 175 Unit V V V A A A W W/ o C o o C C (•) Pulse width limited by safe operating area March 1996 1/6 STB60N03L-10 THERMAL DATA R thj-case R thj-amb R thj-amb Tl Thermal Resistance Junction-case Thermal Resistance Junction-ambient Thermal Resistance Case-sink Maximum Lead Temperature For Soldering Purpose Max Max Typ 1 62.5 0.5 300 o o C/W C/W o C/W o C AVALANCHE CHARACTERISTICS Symbol I AR www.DataSheet4U.com Parameter Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by T j max, δ < 1%) Single Pulse Avalanche Energy (starting T j = 25 o C, ID = I AR , V DD = 25 V) Repetitive Avalanche Energy (pulse width limited by T j max, δ < 1%) Avalanche Current, Repetitive or Not-Repetitive (T c = 100 o C, pulse width limited by T j max, δ < 1%) Max Value 60 600 150 42 Unit A mJ mJ A E AS EAR I AR ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) OFF Symbol V (BR)DSS I DSS I GSS Parameter Drain-source Breakdown Voltage Test Conditions I D = 250 µ A VGS = 0 Min. 30 250 1000 ± 100 Typ. Max. Unit V µA µA nA Zero Gate Voltage V DS = Max Rating Drain Current (V GS = 0) V DS = Max Rating x 0.8 Gate-body Leakage Current (V DS = 0) V GS = ± 20 V T c = 125 o C ON (∗) Symbol V GS(th) R DS(on) Parameter Gate Threshold Voltage V DS = VGS Static Drain-source On Resistance Test Conditions ID = 250 µ A T c = 100 o C T c = 25 o C T c = 100 o C 60 Min. 1 Typ. 1.7 0.0085 0.0012 Max. 2.5 0.01 0.02 0.015 0.03 Unit V Ω Ω Ω Ω A V GS = 10 V I D = 30 A V GS = 10 V I D = 30 A V GS = 5 V I D = 30 A V GS = 5 V I D = 30 A ID(on) On State Drain Current V DS > I D(on) x R DS(on)max V GS = 10 V DYNAMIC Symbol g fs ( ∗ ) C iss C oss C rss Parameter Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Test Conditions V DS > I D(on) x R DS(on)max V DS = 25 V f = 1 MHz I D = 30 A V GS = 0 Min. 30 Typ. 50 3500 1200 450 Max. Unit S pF pF pF 2/6 STB60N03L-10 ELECTRICAL CHARACTERISTICS (continued) SWITCHING ON Symbol t d(on) tr (di/dt) on Qg Q gs www.DataSheet4U.comQ gd Parameter Turn-on Time Rise Time Turn-on Current Slope Total Gate Charge Gate-Source Charge Gate-Drain Charge Test Conditions V DD = 15 V R G = 4.7 Ω V DD = RG = Ω V DD = 10 V I D = 38 A V GS = 5 V ID = V GS = V I D = 60 A V GS = 15 V 130 Min. Typ. 40 400 Max. Unit ns ns A/ µ s nC SWITCHING OFF Symbol t r(Voff) tf tc Parameter Off-voltage Rise Time Fall Time Cross-over Time Test Conditions V DD = 24 V I D = 75 A R G = 4.7 Ω V GS = 5 V (see test circuit, figure 5) Min. Typ. 60 240 310 Max. Unit ns ns ns SOURCE DRAIN DIODE Symbol I SD I SDM (• ) V SD ( ∗ ) t rr Q rr I RRM Parameter Source-drain Current Source-drain Current (pulsed) Forward On Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current I SD = 60 A I SD = 75 A V DD = 0 V V GS = 0 di/dt = 10 A/ µ s o T j = 150 C 100 0.25 5 Test Conditions Min. Typ. Max. 60 240 1.5 Unit A A V ns µC A (∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % (•) Pulse width limited by safe operating area 3/6 STB60N03L-10 TO-262 (I2PAK) MECHANICAL DATA mm MIN. A A1 www.DataSheet4U.com DIM. inch MAX. 4.6 2.69 0.93 1.38 1.4 0.6 1.36 9.35 2.64 10.28 13.5 3.78 1.37 MIN. 0.169 0.098 0.027 0.047 0.049 0.017 0.047 0.354 0.096 0.393 0.519 0.137 0.050 TYP. MAX. 0.181 0.106 0.036 0.054 0.055 0.023 0.053 0.368 0.104 0.404 0.531 0.149 0.054 TYP. 4.3 2.49 0.7 1.2 1.25 0.45 1.21 9 2.44 10 13.2 3.48 1.27 B B1 B2 C C2 D e E L L1 L2 A C2 B2 B E L1 L2 D L 4/6 e A1 C STB60N03L-10 TO-263 (D2PAK) MECHANICAL DATA mm MIN. A A1 www.DataSheet4U.com DIM. inch MAX. 4.6 2.69 0.93 1.4 0.6 1.36 9.35 10.28 5.28 15.85 1.37 1.75 MIN. 0.169 0.098 0.027 0.049 0.017 0.047 0.354 0.393 0.192 0.590 0.050 0.055 TYP. .


D4DS 60N03L-10 05N03LAG


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