PD- 91889A
SMPS MOSFET
IRFBC30A
HEXFET® Power MOSFET
www.DataSheet4U.com
Applications Switch Mode Power Supply (SMPS...
PD- 91889A
SMPS MOSFET
IRFBC30A
HEXFET® Power MOSFET
www.DataSheet4U.com
Applications Switch Mode Power Supply (SMPS) l Uninterruptable Power Supply l High speed power switching
l
VDSS
600V
Rds(on) max
2.2Ω
ID
3.6A
Benefits Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and dynamic dv/dt Ruggedness l Fully Characterized Capacitance and Avalanche Voltage and Current l Effective Coss specified (See AN 1001)
l
TO-220AB
G DS
Absolute Maximum Ratings
Parameter
ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VGS dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torqe, 6-32 or M3 screw
Max.
3.6 2.3 14 74 0.69 ± 30 7.0 -55 to + 150 300 (1.6mm from case ) 10 lbfin (1.1Nm)
Units
A W W/°C V V/ns °C
Typical SMPS Topology:
l
Single
transistor Flyback
Notes
through
are on page 8
www.irf.com
1
5/4/00
IRFBC30A
Static @ TJ = 25°C (unless otherwise specified)
Parameter Drain-to-Source Breakdown Voltage ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient RDS(on) Static Drain-to-Source On-Resistance VGS(th) Gate Threshold Voltage V(BR)DSS www.DataSheet4U.com IDSS IGSS Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Parameter Forward Transconductance...