HTD3

HTD 3 200 C High Temperature High Voltage Rectifier Diodes O Exceptional high temperature Stability U up t o 20 0 OC Exceptionally low leakage Small size 3 KV P RV www.DataSheet4U.com Our proprietary diffusion and passivation process provides this unusual stability and no leakage drift at these elevated temperatures. All diodes are subjected to 10 test temperature cycles from -55 OC to + 200 O C. EDI TYPE NO. HTD 3 PEAK REVERSE VOL TAGE 3,000V DIMENSIONS See Fig.3 ELECTRICAL CHARACTERISTICS (at TA =25 C Unless Otherwise Specified) O Average Rectified Forward Current, @ 50 C I O Average Rectified Forward Current, @ 200 C IO Max. DC Reverse Current @ PRV @ 25 C, IR Max. DC Reverse Current @ PRV @ 200 C,IR (See Note:1) O O O O 50 mA 1 mA 0.1 A 30 A max 18 A typical 25 V See Note 2 -55 C to+200 C -55 C to+200 C Note 2 All diodes are hot forward swept for forward O stability to maximum temperature of 200 C on dynamic display on curve trace oscilloscope. O O O O Max. Forward Voltage Drop at 25 C and 10mA ,VF (Volts) Forward Stability Tj 200 C Ambient Operating Temperature Range O O Storage Temperature Range,T Note1 IR at 200 OC readings are taken in oil after voltage has been applied to device for 5 minutes. EDI reserves the rightto change these specifications at any time without notice. HTD 3 FIG.1 OUTPUT CURRENT vs AMBIENT TEMPERATURE 100 % RATED FWD CURRENT 75 50 25 0 0 25 50 75 100 125 150 175 200 AMBIENT TEMPERATURE (OC) www.DataSheet4U.com FIG.2 NON-R...