DATA SHEET
SILICON POWER TRANSISTOR
2SC4552
NPN SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING
The 2SC4552 is ...
DATA SHEET
SILICON POWER
TRANSISTOR
2SC4552
NPN SILICON EPITAXIAL
TRANSISTOR FOR HIGH-SPEED SWITCHING
The 2SC4552 is a power
transistor developed for high-speed
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PACKAGE DRAWING (UNIT: mm)
switching and features low VCE(sat) and high hFE. This
transistor is ideal for use in drivers such as DC/DC converters and actuators. In addition, a small resin-molded insulation type package contributes to high-density mounting and reduction of mounting cost.
FEATURES
High hFE and low VCE(sat): hFE ≥ 100 (VCE = 2 V, IC = 3 A) VCE(sat) ≤ 0.3 V (IC = 8 A, IB = 0.4 A) Mold package that does not require an insulating board or insulation bushing
ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)
Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current (DC) Collector current (pulse) Base current (DC) Total power dissipation Total power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC(DC) IC(pulse)* IB(DC) PT (Tc = 25°C) PT (Ta = 25°C) Tj Tstg Ratings 100 60 7.0 15 30 7.5 30 2.0 150 −55 to +150 Unit V V V A A A W W °C °C
Electrode Connection 1. Base 2. Collector 3. Emitter
* PW ≤ 300 µs, duty cycle ≤ 10%
The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for availability and additional information.
Document No. D15...