5N150UF

SGF5N150UF IGBT SGF5N150UF General Description Fairchild’s Insulated Gate Bipolar Transistor (IGBT) provides low conduction and switching losses. www.DataSheet4U.com SGF5N150UF is designed for the Switching Power Supply applications. Features High Speed Switching Low Saturation Voltage : VCE(sat) = 4.7 V @ IC = 5A High Input Impedance Application Switching Power Supply - High Input Voltage Off-line Converter C G TO-3PF G C E E TC = 25°C unless otherwise noted Absolute Maximum Ratings Symbol VCES VGES IC ICM (1) PD TJ Tstg TL Description Collector-Emitter Voltage Gate-Emitter Voltage Collector Current Collector Current Pulsed Collector Current Maximum Power Dissipation Maximum Power Dissipation Operating Junction Temperature Storage Temperature Range Maximum Lead Temp. for Soldering Purposes, 1/8” from Case for 5 Seconds @ TC = 25°C @ TC = 100°C @ TC = 25°C @ TC = 100°C SGF5N150UF 1500 ± 20 10 5 20 62.5 25 -55 to +150 -55 to +150 300 Units V V A A A W W °C °C °C Notes : (1) Repetitive rating : Pulse width limited by max. junction temperature Thermal Characteristics Symbol RθJC RθJA Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Typ. --Max. 2.0 40 Units ° C/ W ° C/ W ©2003 Fairchild Semiconductor Corporation SGF5N150UF Rev. B SGF5N150UF Electrical Characteristics of IGBT Symbol Parameter TC = 25°C unless otherwise noted Test Conditions Min. Typ. Max. Units Off Characteristics BVCES ICES IGES Collector-Emitte...