STF30NM60ND

STP/F30NM60ND-STW30NM60ND STB30NM60ND-STI30NM60ND N-channel 600V - 0.11Ω - 25A TO-220/FP/D2PAK/I2PAK/TO-247 FDmesh™ II Power MOSFET (with fast diode) Preliminary Data Features Type STB30NM60ND STI30NM60ND STF30NM60ND STP30NM60ND STW30NM60ND www.DataSheet4U.com VDSS 600V 600V 600V 600V 600V RDS(on) Max < 0.13Ω < 0.13Ω < 0.13Ω < 0.13Ω < 0.13Ω ID 25A 25A 25A(1) 25A 25A 3 3 1 2 3 1 2 1 TO-220 D2PAK TO-220FP 1. Limited only by maximum temperature allowed ■ ■ ■ ■ ■ The world’s best RDS(on)*in TO-220 amongst the fast recovery diode devices 100% avalanche tested Low input capacitance and gate charge Low gate input resistance Extremely high dv/dt and avalanche capabilities Figure 1. 3 12 2 1 3 I2PAK TO-247 Internal schematic diagram Application ■ Switching applications Description The FDmesh™ II series belongs to the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a new vertical structure to the company's strip layout and associates all advantages of reduced onresistance and fast switching with an intrinsic fastrecovery body diode.It is therefore strongly recommended for bridge topologies, in particular ZVS phase-shift converters. Table 1. Device summary Order codes STB30NM60ND STI30NM60ND STF30NM60ND STP30NM60ND STW30NM60ND November 2007 Marking 30NM60ND 30NM60ND 30NM60ND 30NM60ND 30NM60ND Rev 1 Package D²PAK I²PAK TO-220FP TO-220 TO-247 Packaging Tape & reel Tube Tube Tube Tube 1/15 www.st.com 15 This is preliminary information o...